Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14347779Application Date: 2012-09-20
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Publication No.: US09337092B2Publication Date: 2016-05-10
- Inventor: Junichi Hamaguchi , Shuji Kodaira , Yuta Sakamoto , Akifumi Sano , Koukichi Kamada , Yoshiyuki Kadokura , Joji Hiroishi , Yukinobu Numata , Koji Suzuki
- Applicant: ULVAC, INC.
- Applicant Address: JP Chigasaki-Shi
- Assignee: ULVAC, INC.
- Current Assignee: ULVAC, INC.
- Current Assignee Address: JP Chigasaki-Shi
- Agency: Grossman, Tucker, Perreault & Pfleger, PLLC
- Priority: JP2011-215847 20110930
- International Application: PCT/JP2012/074075 WO 20120920
- International Announcement: WO2013/047323 WO 20130404
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L23/532 ; H01L21/285 ; C23C14/02 ; C23C14/04 ; C23C14/16 ; C23C14/14 ; C23C14/34
Abstract:
A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.
Public/Granted literature
- US20150221552A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2015-08-06
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