Invention Grant
- Patent Title: Integrated circuit devices including a via structure and methods of fabricating integrated circuit devices including a via structure
- Patent Title (中): 包括通孔结构的集成电路器件和制造包括通孔结构的集成电路器件的方法
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Application No.: US13926616Application Date: 2013-06-25
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Publication No.: US09337125B2Publication Date: 2016-05-10
- Inventor: Jae-hwa Park , Kwang-jin Moon , Byung-lyul Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, P.A.
- Priority: KR10-2012-0101147 20120912
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/532 ; H01L25/065 ; H01L21/768 ; H01L21/48 ; H01L23/498 ; H01L23/552
Abstract:
Integrated circuit devices are provided. The integrated circuit devices may include a via structure including a conductive plug, a conductive barrier layer spaced apart from the conductive plug, and an insulating layer between the conductive plug and conductive barrier layer. Related methods of forming integrated circuit devices are also provided.
Public/Granted literature
Information query
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