Invention Grant
- Patent Title: Method to integrate different function devices fabricated by different process technologies
- Patent Title (中): 集成由不同工艺技术制造的不同功能器件的方法
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Application No.: US13729281Application Date: 2012-12-28
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Publication No.: US09337182B2Publication Date: 2016-05-10
- Inventor: Kuei-Sung Chang , Chun-Wen Cheng , Alex Kalnitsky , Chia-Hua Chu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L25/16 ; H01L49/02 ; H01L23/10 ; H01L23/00
Abstract:
The present disclosure is directed to an apparatus and method for manufacture thereof. The apparatus includes a first passive substrate bonded to a second active substrate by a conductive metal interface. The conductive metal interface allows for integration of different function devices at a wafer level.
Public/Granted literature
- US20140183611A1 METHOD TO INTEGRATE DIFFERENT FUNCTION DEVICES FABRICATED BY DIFFERENT PROCESS TECHNOLOGIES Public/Granted day:2014-07-03
Information query
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