Invention Grant
- Patent Title: Ferromagnet-free spin transistor and method for operating the same
- Patent Title (中): 无铁磁性自旋晶体管及其操作方法
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Application No.: US14508404Application Date: 2014-10-07
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Publication No.: US09337272B2Publication Date: 2016-05-10
- Inventor: Hyun Cheol Koo , Hyung-jun Kim , Joonyeon Chang , Won Young Choi , Suk Hee Han
- Applicant: Korea Institute of Science and Technology
- Applicant Address: KR Seoul
- Assignee: Korea Institute of Science and Technology
- Current Assignee: Korea Institute of Science and Technology
- Current Assignee Address: KR Seoul
- Agency: NSIP Law
- Priority: KR10-2014-0057853 20140514
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/12 ; H01L29/82 ; H01L29/205 ; H01L29/16
Abstract:
A spin transistor includes: an input part that is made of a material exhibiting a spin Hall effect and configured to transfer electrons with a predetermined direction of spin to a connecting part; and the connecting part that receives the electrons with the predetermined direction of spin from the input part, rotates the spin of the electrons in accordance with a gate voltage applied to the gate electrode, and transfers the electrons to the output part.
Public/Granted literature
- US20150333123A1 FERROMAGNET-FREE SPIN TRANSISTOR AND METHOD FOR OPERATING THE SAME Public/Granted day:2015-11-19
Information query
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