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1.发明申请公开(公告)号：US20230005651A1
公开(公告)日：2023-01-05
申请号：US17525855
申请日：2021-11-12
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Hyun Cheol Koo , Ki Hyuk Han , Dong Soo Han , Ouk Jae Lee , Byoung Chul Min , Hyung Jun Kim
Abstract: A nano spintronic device for using the spin current of a ferromagnetic material and the spin current of a heavy metal channel. The device includes a lower channel layer, a free layer, a pinned layer, an insulating film layer, and an upper channel layer. When current flows upon application of power, electrons are divided into +y-polarized spins and −y-polarized spins in the lower channel layer, thereby generating torque in the free layer. The torque switches the magnetization direction of the free layer to an +y-axis direction or an −y-axis direction so that the free layer stores magnetization information according to the magnetization direction. When current flows in the upper channel layer, the current flows into the pinned layer so that electrons in the pinned layer are divided into +y-polarized spins and −y-polarized spins. The insulating layer insulates the free layer and the pinned layer from each other. When power is supplied, current flows in the upper channel layer and flows into the pinned layer, thereby inducing polarized spins in the pinned layer, resulting in the generation of torque in the free layer.
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公开(公告)号：US10014396B2
公开(公告)日：2018-07-03
申请号：US15487695
申请日：2017-04-14
Applicant: Korea Institute of Science and Technology
Inventor： Joon Yeon Chang , Tae Eon Park , Byoung Chul Min , Hyun Cheol Koo , Suk Hee Han
CPC classification number: H01L29/66984 , B82Y10/00 , H01L27/222 , H01L29/045 , H01L29/0673 , H01L29/417 , H01L29/41725 , H01L29/47 , H01L29/82 , H01L43/08
Abstract: A spin control electronic device operable at room temperature according to an embodiment of the present invention includes a transfer channel that includes a low-dimensional nanostructure, the nanostructure being located on a substrate, having an elongate shape in a first direction and having a cross section, cut along a second direction that is perpendicular to the first direction, in the shape of a triangle; a source electrode located on the substrate and intersecting the transfer channel, the source electrode covering part of the transfer channel; and a drain electrode spaced apart from the source electrode on the substrate, the drain electrode intersecting the transfer channel and covering part of the transfer channel.
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公开(公告)号：US09831245B1
公开(公告)日：2017-11-28
申请号：US15416859
申请日：2017-01-26
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Hyung-Jun Kim , Hyun Cheol Koo , Chaun Jang , Hansung Kim
IPC: H01L21/28 , H01L29/66 , H01L27/092 , H01L21/8238 , H01L29/778 , H01L29/36
CPC classification number: H01L27/092 , H01L21/28291 , H01L21/823807 , H01L21/8252 , H01L27/0605 , H01L27/085 , H01L29/0895 , H01L29/36 , H01L29/66462 , H01L29/66984 , H01L29/7785 , H01L29/7786
Abstract: A complementary logic device includes i) a substrate, ii) a first semiconductor device located on the substrate and including a first channel layer, a carrier supply layer for supplying a carrier to the channel layer, and an upper cladding layer and a lower cladding layer respectively located at upper and lower portions of the channel layer, iii) a second semiconductor device located on the substrate and including a structure the same or similar to that of the first semiconductor device, iv) a source electrode located on the two semiconductors and made of a ferromagnetic body, v) a drain electrode located on the two semiconductors and made of a ferromagnetic body, and vi) a gate electrode located on the two semiconductors and located between the two electrodes so that a gate voltage is applied thereto to control a spin of electrons passing through the two channel layers.
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公开(公告)号：US09337272B2
公开(公告)日：2016-05-10
申请号：US14508404
申请日：2014-10-07
Applicant: Korea Institute of Science and Technology
Inventor： Hyun Cheol Koo , Hyung-jun Kim , Joonyeon Chang , Won Young Choi , Suk Hee Han
IPC: H01L29/06 , H01L29/12 , H01L29/82 , H01L29/205 , H01L29/16
CPC classification number: H01L29/122 , B82Y10/00 , H01L29/0669 , H01L29/0673 , H01L29/1025 , H01L29/1606 , H01L29/205 , H01L29/66984 , H01L29/82 , H01L43/08
Abstract: A spin transistor includes: an input part that is made of a material exhibiting a spin Hall effect and configured to transfer electrons with a predetermined direction of spin to a connecting part; and the connecting part that receives the electrons with the predetermined direction of spin from the input part, rotates the spin of the electrons in accordance with a gate voltage applied to the gate electrode, and transfers the electrons to the output part.
Abstract translation: 自旋晶体管包括：输入部分，其由表现出自旋霍尔效应并被配置为将电子以预定旋转方向转移到连接部分的材料制成; 并且从输入部分接收具有预定旋转方向的电子的连接部分，根据施加到栅电极的栅极电压来旋转电子的自旋，并将电子传送到输出部分。
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Patent Agency Ranking
5.发明授权Complementary spin device having a gate, a source, a first and second drain electrode 有权具有栅极，源极，第一和第二漏极的互补自旋器件公开(公告)号：US09099328B2
公开(公告)日：2015-08-04
申请号：US14052129
申请日：2013-10-11
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Hyun Cheol Koo , Hyung-Jun Kim , Joon Yeon Chang , Jun Woo Choi , Suk Hee Han
IPC: H01L21/02 , H01L29/08 , H01L29/66 , H01L29/82 , H01L29/06 , H01L29/417 , H01L29/423
CPC classification number: H01L29/0673 , H01L29/41725 , H01L29/4238 , H01L29/66984
Abstract: A complementary device including a gate electrode, a channel, a source electrode connected to the gate electrode and the channel, and a first drain electrode and a second drain electrode connected to the gate electrode and the channel is provided. The first/second drain electrode is formed so that, in accordance with a voltage applied to the gate electrode, electron spins injected into the source electrode are moved from the source electrode to the first/second drain electrode through the channel while rotating in a first/second direction. Directions of the electron spins that reach the first drain electrode and the second drain electrode are opposite to each other.
Abstract translation: 提供了包括栅电极，沟道，连接到栅电极和沟道的源电极以及连接到栅电极和沟道的第一漏电极和第二漏电极的互补器件。 第一/第二漏极形成为使得根据施加到栅电极的电压，注入到源电极的电子自旋通过沟道从源电极移动到第一/第二漏电极，同时在第一 /第二个方向。 到达第一漏电极和第二漏电极的电子自旋的方向彼此相反。
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公开(公告)号：US08587044B2
公开(公告)日：2013-11-19
申请号：US13667380
申请日：2012-11-02
Applicant: Korea Institute of Science and Technology
Inventor： Hyun Cheol Koo , Hyung Jun Kim , Joon Yeon Chang , Suk Hee Han , Hi Jung Kim
IPC: H01L21/02
CPC classification number: H01L29/66984 , G11C11/161 , H01L21/823807 , H01L21/823828 , H01L21/8252 , H01L27/0605 , H03K19/18
Abstract: A complementary logic device includes: an insulating layer formed on a substrate; a source electrode formed of a ferromagnetic body on the insulating layer; a gate insulating film; a gate electrode formed on the gate insulating film and controlling a magnetization direction of the source electrode; a channel layer formed on each of a first side surface and a second side surface of the source electrode and transmitting spin-polarized electrons from the source electrode; a first drain electrode formed on the first side surface of the source electrode; and a second drain electrode formed on the second side surface of the source electrode, wherein a magnetization direction of the first drain electrode and a magnetization direction of the second drain electrode are antiparallel to each other. Therefore, not only characteristics of low power and high speed but also characteristics of non-volatility and multiple switching by spin may be obtained.
Abstract translation: 互补逻辑器件包括：形成在衬底上的绝缘层; 在所述绝缘层上由铁磁体形成的源电极; 栅极绝缘膜; 形成在所述栅极绝缘膜上并控制所述源电极的磁化方向的栅电极; 形成在所述源电极的第一侧面和第二侧面的每一个上的沟道层，并且从所述源电极传输自旋极化电子; 形成在所述源电极的所述第一侧表面上的第一漏电极; 以及形成在所述源电极的所述第二侧表面上的第二漏电极，其中所述第一漏电极的磁化方向和所述第二漏电极的磁化方向彼此反平行。 因此，不仅可以获得低功率和高速度的特性，而且可以获得非挥发性和通过自旋的多次切换的特性。
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7.发明授权公开(公告)号：US12106879B2
公开(公告)日：2024-10-01
申请号：US17525855
申请日：2021-11-12
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Hyun Cheol Koo , Ki Hyuk Han , Dong Soo Han , Ouk Jae Lee , Byoung Chul Min , Hyung Jun Kim
CPC classification number: H01F10/329 , H10N50/80 , H01F10/3259
Abstract: A nano spintronic device for using the spin current of a ferromagnetic material and the spin current of a heavy metal channel. The device includes a lower channel layer, a free layer, a pinned layer, an insulating film layer, and an upper channel layer. When current flows upon application of power, electrons are divided into +y-polarized spins and −y-polarized spins in the lower channel layer, thereby generating torque in the free layer. The torque switches the magnetization direction of the free layer to an +y-axis direction or an −y-axis direction so that the free layer stores magnetization information according to the magnetization direction. When current flows in the upper channel layer, the current flows into the pinned layer so that electrons in the pinned layer are divided into +y-polarized spins and −y-polarized spins. The insulating layer insulates the free layer and the pinned layer from each other. When power is supplied, current flows in the upper channel layer and flows into the pinned layer, thereby inducing polarized spins in the pinned layer, resulting in the generation of torque in the free layer.
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公开(公告)号：US10998906B1
公开(公告)日：2021-05-04
申请号：US16774322
申请日：2020-01-28
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Kyoung Whan Kim , Dong Soo Han , Byoung Chul Min , Seok Min Hong , Hyun Cheol Koo , Hyung Jun Kim , Tae Eon Park , Ouk Jae Lee
Abstract: A logic function device according to an embodiment of the present invention includes one or more function reconfiguring units having magnetization in one direction set by spin torque caused due to an function reconfiguring current, and an output terminal formed at an end thereof; and one or more input units formed on the function reconfiguring unit and having magnetization in the one direction set by spin torque caused due to an input current, wherein an output voltage of the output terminal is determined on the basis of whether a magnetization direction of the function reconfiguring unit and a magnetization direction of the input unit are parallel or anti-parallel.
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公开(公告)号：US20210126639A1
公开(公告)日：2021-04-29
申请号：US16774322
申请日：2020-01-28
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Kyoung Whan Kim , Dong Soo Han , Byoung Chul Min , Seok Min Hong , Hyun Cheol Koo , Hyung Jun Kim , Tae Eon Park , Ouk Jae Lee
Abstract: A logic function device according to an embodiment of the present invention includes one or more function reconfiguring units having magnetization in one direction set by spin torque caused due to an function reconfiguring current, and an output terminal formed at an end thereof; and one or more input units formed on the function reconfiguring unit and having magnetization in the one direction set by spin torque caused due to an input current, wherein an output voltage of the output terminal is determined on the basis of whether a magnetization direction of the function reconfiguring unit and a magnetization direction of the input unit are parallel or anti-parallel.
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