Invention Grant
- Patent Title: Formation of large scale single crystalline graphene
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Application No.: US13894954Application Date: 2013-05-15
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Publication No.: US09337274B2Publication Date: 2016-05-10
- Inventor: Christos D. Dimitrakopoulos , Keith E. Fogel , Jeehwan Kim , Hongsik Park
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent David Cain
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/027 ; H01L21/20 ; B32B37/14 ; C01B31/00 ; B32B38/10 ; B32B9/04 ; H01L29/16 ; B32B37/26 ; C01B31/04 ; B32B9/00 ; H01L23/532

Abstract:
A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a first substrate. The spreading layer has at least one monolayer. A stressor layer is formed on the spreading layer. The stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein at least the closest monolayer remains on the stressor layer. The at least one monolayer is stamped against a second substrate to adhere remnants of the two-dimensional material on the at least one monolayer to the second substrate to provide a single monolayer on the stressor layer. The single monolayer is transferred to a third substrate.
Public/Granted literature
- US20140342127A1 FORMATION OF LARGE SCALE SINGLE CRYSTALLINE GRAPHENE Public/Granted day:2014-11-20
Information query
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