Invention Grant
US09337280B2 Transistors, methods of forming transistors and display devices having transistors
有权
晶体管，形成晶体管的方法和具有晶体管的显示器件
- Patent Title: Transistors, methods of forming transistors and display devices having transistors
- Patent Title (中): 晶体管，形成晶体管的方法和具有晶体管的显示器件
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Application No.: US14206071Application Date: 2014-03-12
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Publication No.: US09337280B2Publication Date: 2016-05-10
- Inventor: Jin-Woo Lee , Moo-Jin Kim
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0036693 20130404
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/267 ; H01L29/66 ; H01L29/165 ; H01L29/786 ; H01L29/778 ; H01L29/10 ; H01L29/16
Abstract:
A transistor, a display device, and associated methods, the transistor including a substrate; an active layer pattern disposed on the substrate, the active layer pattern including silicon and graphene; a gate insulating layer disposed on the active layer pattern; a gate electrode disposed on the gate insulating layer; an insulating interlayer covering the active layer pattern and the gate electrode; and a source electrode and a drain electrode in contact with the active layer pattern.
Public/Granted literature
- US20140299838A1 TRANSISTORS, METHODS OF FORMING TRANSISTORS AND DISPLAY DEVICES HAVING TRANSISTORS Public/Granted day:2014-10-09
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