公开(公告)号：US09577114B2

公开(公告)日：2017-02-21

申请号：US15147628

申请日：2016-05-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jin-Woo Lee ,  Moo-Jin Kim

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/165 ,  H01L29/267 ,  H01L29/778 ,  H01L29/10 ,  H01L29/16 ,  H01L21/465 ,  H01L27/32 ,  H01L29/04 ,  H01L29/423

CPC classification number: H01L29/78696 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02527 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/465 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/1054 ,  H01L29/1606 ,  H01L29/165 ,  H01L29/267 ,  H01L29/42356 ,  H01L29/66045 ,  H01L29/66431 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/78684 ,  H01L29/7869

Abstract: A transistor, a display device, and associated methods, the transistor including a substrate; an active layer pattern disposed on the substrate, the active layer pattern including silicon and graphene; a gate insulating layer disposed on the active layer pattern; a gate electrode disposed on the gate insulating layer; an insulating interlayer covering the active layer pattern and the gate electrode; and a source electrode and a drain electrode in contact with the active layer pattern.

Abstract translation: 晶体管，显示器件和相关方法，所述晶体管包括衬底; 设置在所述衬底上的有源层图案，所述有源层图案包括硅和石墨烯; 设置在有源层图案上的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 覆盖有源层图案和栅电极的绝缘夹层; 以及与有源层图案接触的源电极和漏电极。

公开(公告)号：US09337280B2

公开(公告)日：2016-05-10

申请号：US14206071

申请日：2014-03-12

Applicant: Samsung Display Co., Ltd.

Inventor： Jin-Woo Lee ,  Moo-Jin Kim

IPC: H01L29/06 ,  H01L29/267 ,  H01L29/66 ,  H01L29/165 ,  H01L29/786 ,  H01L29/778 ,  H01L29/10 ,  H01L29/16

CPC classification number: H01L29/78696 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02527 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/465 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/1054 ,  H01L29/1606 ,  H01L29/165 ,  H01L29/267 ,  H01L29/42356 ,  H01L29/66045 ,  H01L29/66431 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/78684 ,  H01L29/7869

Abstract: A transistor, a display device, and associated methods, the transistor including a substrate; an active layer pattern disposed on the substrate, the active layer pattern including silicon and graphene; a gate insulating layer disposed on the active layer pattern; a gate electrode disposed on the gate insulating layer; an insulating interlayer covering the active layer pattern and the gate electrode; and a source electrode and a drain electrode in contact with the active layer pattern.

Abstract translation: 晶体管，显示器件和相关方法，所述晶体管包括衬底; 设置在所述衬底上的有源层图案，所述有源层图案包括硅和石墨烯; 设置在有源层图案上的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 覆盖有源层图案和栅电极的绝缘夹层; 以及与有源层图案接触的源电极和漏电极。