Invention Grant
- Patent Title: Solar cells with tunnel dielectrics
- Patent Title (中): 具有隧道电介质的太阳能电池
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Application No.: US14229769Application Date: 2014-03-28
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Publication No.: US09337369B2Publication Date: 2016-05-10
- Inventor: David D. Smith
- Applicant: David D. Smith
- Applicant Address: US CA San Jose
- Assignee: SunPower Corporation
- Current Assignee: SunPower Corporation
- Current Assignee Address: US CA San Jose
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/00 ; H01L31/0368 ; H01L31/068

Abstract:
A solar cell can have a first dielectric formed over a first doped region of a silicon substrate. The solar cell can have a second dielectric formed over a second doped region of the silicon substrate, where the first dielectric is a different type of dielectric than the second dielectric. A doped semiconductor can be formed over the first and second dielectric. A positive-type metal and a negative-type metal can be formed over the doped semiconductor.
Public/Granted literature
- US20150280031A1 SOLAR CELLS WITH TUNNEL DIELECTRICS Public/Granted day:2015-10-01
Information query
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