Invention Grant
- Patent Title: Chalcogenide switching device using germanium and selenium and manufacturing method thereof
- Patent Title (中): 使用锗和硒的硫族化物开关器件及其制造方法
-
Application No.: US14242146Application Date: 2014-04-01
-
Publication No.: US09337422B2Publication Date: 2016-05-10
- Inventor: Byung-ki Cheong , Sudong Kim , Suyoun Lee , Sang-Yeol Shin , Hyung-Woo Ahn
- Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Seoul
- Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Seoul
- Agency: NSIP Law
- Priority: KR10-2013-0037445 20130405
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
Disclosed is a method for manufacturing a chalcogenide switching device, which includes forming a first electrode on a substrate, forming a chalcogenide material composed of Gex and Se1-x formed on the first electrode, and forming a second electrode on the chalcogenide material, wherein the value x is greater than 0 and smaller than 1. A chalcogenide switching device manufactured by this method is also disclosed.
Public/Granted literature
- US20140299833A1 CHALCOGENIDE SWITCHING DEVICE USING GERMANIUM AND SELENIUM AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-10-09
Information query
IPC分类:
