公开(公告)号：US09337422B2

公开(公告)日：2016-05-10

申请号：US14242146

申请日：2014-04-01

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byung-ki Cheong ,  Sudong Kim ,  Suyoun Lee ,  Sang-Yeol Shin ,  Hyung-Woo Ahn

IPC: H01L45/00

CPC classification number: H01L45/143 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/1625

Abstract: Disclosed is a method for manufacturing a chalcogenide switching device, which includes forming a first electrode on a substrate, forming a chalcogenide material composed of Gex and Se1-x formed on the first electrode, and forming a second electrode on the chalcogenide material, wherein the value x is greater than 0 and smaller than 1. A chalcogenide switching device manufactured by this method is also disclosed.

Abstract translation: 公开了一种制造硫族化物开关器件的方法，其包括在衬底上形成第一电极，形成由第一电极上形成的Gex和Se1-x组成的硫族化物材料，并在硫族化物材料上形成第二电极，其中， 值x大于0且小于1.还公开了通过该方法制造的硫族化物开关器件。