Invention Grant
- Patent Title: Reticle and method of fabricating the same
- Patent Title (中): 掩模版及其制造方法
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Application No.: US14278678Application Date: 2014-05-15
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Publication No.: US09341940B2Publication Date: 2016-05-17
- Inventor: Wen-Chang Hsueh , Chia-Jen Chen , Ta-Cheng Lien , Hsin-Chang Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G03F1/32
- IPC: G03F1/32

Abstract:
A reticle and a method of fabricating the reticle are provided. In various embodiments, the reticle includes a substrate, a patterned first attenuating layer, a patterned second attenuating layer, and a patterned third attenuating layer. The patterned first attenuating layer is disposed on the substrate. The patterned second attenuating layer is disposed on the patterned first attenuating layer. The patterned third attenuating layer is disposed on the patterned second attenuating layer. A first part of the patterned first attenuating layer, a first part of patterned second attenuating layer, and the patterned third attenuating layer are stacked on the substrate as a binary intensity mask portion.
Public/Granted literature
- US20150331309A1 RETICLE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-11-19
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