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28 条记录 (耗时 0.019 秒)

    OPTICAL ASSEMBLY WITH COATING AND METHODS OF USE
    2.
    发明申请
    OPTICAL ASSEMBLY WITH COATING AND METHODS OF USE 有权

    公开(公告)号：US20220260932A1

    公开(公告)日：2022-08-18

    申请号：US17481010

    申请日：2021-09-21

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Pei-Cheng Hsu ,  Ping-Hsun Lin ,  Ta-Cheng Lien ,  Hsin-Chang Lee

    IPC分类号： G03F7/20 ,  C23C16/455

    摘要： Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.

    Method of Critical Dimension Control by Oxygen and Nitrogen Plasma Treatment in EUV Mask
    4.
    发明申请
    Method of Critical Dimension Control by Oxygen and Nitrogen Plasma Treatment in EUV Mask 有权

    公开(公告)号：US20220121103A1

    公开(公告)日：2022-04-21

    申请号：US17568037

    申请日：2022-01-04

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Pei-Cheng Hsu ,  Chun-Fu Yang ,  Ta-Cheng Lien ,  Hsin-Chang Lee

    IPC分类号： G03F1/24 ,  G03F1/70 ,  G03F7/20

    摘要： The present disclosure describes a method of patterning a semiconductor wafer using extreme ultraviolet lithography (EUVL). The method includes receiving an EUVL mask that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further includes patterning the absorber layer to form a trench on the EUVL mask, wherein the trench has a first width above a target width. The method further includes treating the EUVL mask with oxygen plasma to reduce the trench to a second width, wherein the second width is below the target width. The method may also include treating the EUVL mask with nitrogen plasma to protect the capping layer, wherein the treating of the EUVL mask with the nitrogen plasma expands the trench to a third width at the target width.

    Method of Critical Dimension Control by Oxygen and Nitrogen Plasma Treatment in EUV Mask
    5.
    发明申请
    Method of Critical Dimension Control by Oxygen and Nitrogen Plasma Treatment in EUV Mask 有权

    公开(公告)号：US20210033960A1

    公开(公告)日：2021-02-04

    申请号：US16776046

    申请日：2020-01-29

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Pei-Cheng Hsu ,  Chun-Fu Yang ,  Ta-Cheng Lien ,  Hsin-Chang Lee

    IPC分类号： G03F1/24 ,  G03F1/54 ,  G03F1/80 ,  G03F1/48 ,  G03F1/70 ,  G03F7/20

    摘要： The present disclosure describes a method of patterning a semiconductor wafer using extreme ultraviolet lithography (EUVL). The method includes receiving an EUVL mask that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further includes patterning the absorber layer to form a trench on the EUVL mask, wherein the trench has a first width above a target width. The method further includes treating the EUVL mask with oxygen plasma to reduce the trench to a second width, wherein the second width is below the target width. The method may also include treating the EUVL mask with nitrogen plasma to protect the capping layer, wherein the treating of the EUVL mask with the nitrogen plasma expands the trench to a third width at the target width.

    EUV photo masks and manufacturing method thereof
    6.
    发明授权
    EUV photo masks and manufacturing method thereof 有权

    公开(公告)号：US11506969B2

    公开(公告)日：2022-11-22

    申请号：US17109833

    申请日：2020-12-02

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    发明人： Pei-Cheng Hsu ,  Ta-Cheng Lien ,  Hsin-Chang Lee

    IPC分类号： G03F1/24

    摘要： A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.

    Reticle container
    7.
    发明授权
    Reticle container 有权

    公开(公告)号：US11237477B2

    公开(公告)日：2022-02-01

    申请号：US16012253

    申请日：2018-06-19

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    发明人： Pei-Cheng Hsu ,  Ta-Cheng Lien ,  Tzu Yi Wang ,  Hsin-Chang Lee

    IPC分类号： G03F1/66 ,  G03F7/20 ,  H01L21/673

    摘要： A mask container for storing a mask for photolithography, includes a cover and a base having a plurality of tapered corners. The tapered corners taper outward and downward from a top major surface of the base. The cover having the tapered corners extends downward that covers the tapered corners of the base when the cover is attached to the base. The tapered corners of the cover are tapered at about the same angle as the tapered corners of the base so that a surface of the tapered corners of the cover is substantially parallel to a corresponding surface of the tapered corner of the base when the cover is attached to the base. A recess is located in the tapered corners of the cover. A biasing member and a ball-shaped member are located in the tapered corners of the base to mate with the recess when the cover is attached to the base.