Invention Grant
US09343203B2 Method and apparatus for forming oriented nanowire material and method for forming conductive structure
有权
用于形成取向纳米线材料的方法和装置及其形成导电结构的方法
- Patent Title: Method and apparatus for forming oriented nanowire material and method for forming conductive structure
- Patent Title (中): 用于形成取向纳米线材料的方法和装置及其形成导电结构的方法
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Application No.: US14499783Application Date: 2014-09-29
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Publication No.: US09343203B2Publication Date: 2016-05-17
- Inventor: Ruiyong Wang , Feng Bai , Yiming Zhao , Tao Ren , Zhen Liu
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing CN Beijing
- Agency: Nath, Goldberg & Meyer
- Agent Joshua B. Goldberg; Christopher Thomas
- Priority: CN201410302427 20140627
- Main IPC: H01B13/00
- IPC: H01B13/00

Abstract:
The present invention provides a method and an apparatus for forming an oriented nanowire material as well as a method for forming a conductive structure, which can be used to solve the problem of imperfect process for forming oriented nanowire material in prior art. The method for forming an oriented nanowire material of the present invention comprises: forming a liquid film in a closed frame by a dispersion containing nanowires; expanding the closed frame in a first direction so that the liquid film expands in the first direction along with the closed frame; contracting the closed frame in the first direction so that the liquid film contracts in the first direction along with the closed frame; transferring the contracted liquid film to a substrate; and curing the liquid film to form an oriented nanowire material on the substrate.
Public/Granted literature
- US20150380131A1 Method and Apparatus for Forming Oriented Nanowire Material and Method for Forming Conductive Structure Public/Granted day:2015-12-31
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