发明授权
- 专利标题： Power semiconductor device
- 专利标题（中）： 功率半导体器件
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申请号： US14364189申请日： 2012-01-25
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公开(公告)号： US09343388B2公开(公告)日： 2016-05-17
- 发明人: Mamoru Terai , Tatsuo Ota , Hiroya Ikuta , Kenichi Hayashi , Takashi Nishimura , Toshiaki Shinohara
- 申请人： Mamoru Terai , Tatsuo Ota , Hiroya Ikuta , Kenichi Hayashi , Takashi Nishimura , Toshiaki Shinohara
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 国际申请： PCT/JP2012/051489 WO 20120125
- 国际公布： WO2013/111276 WO 20130801
- 主分类号： H01L23/31
- IPC分类号： H01L23/31 ; H01L25/07 ; H01L23/24 ; H01L23/498 ; H01L29/16 ; H01L29/20 ; H01L23/00 ; H01L25/18
摘要：
A power semiconductor device is provided with a semiconductor-element substrate in which a front-surface electrode pattern is formed on a surface of an insulating substrate; semiconductor elements for electric power which are affixed to the surface of the front-surface electrode pattern; a partition wall which is provided on the front-surface electrode pattern so as to enclose the semiconductor elements for electric power; a first sealing resin member which is filled inside the partition wall; a second sealing resin member which covers the first sealing resin member and a part of the semiconductor-element substrate which is exposed from the partition wall, wherein an electrode for a relay terminal is provided on a surface of the partition wall, and a wiring from inside of the partition wall to outside of the partition wall is led out via the electrode for a relay terminal.
公开/授权文献
- US20150076517A1 POWER SEMICONDUCTOR DEVICE 公开/授权日：2015-03-19
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