摘要:
A power semiconductor device is provided with a semiconductor-element substrate in which a front-surface electrode pattern is formed on a surface of an insulating substrate; semiconductor elements for electric power which are affixed to the surface of the front-surface electrode pattern; a partition wall which is provided on the front-surface electrode pattern so as to enclose the semiconductor elements for electric power; a first sealing resin member which is filled inside the partition wall; a second sealing resin member which covers the first sealing resin member and a part of the semiconductor-element substrate which is exposed from the partition wall, wherein an electrode for a relay terminal is provided on a surface of the partition wall, and a wiring from inside of the partition wall to outside of the partition wall is led out via the electrode for a relay terminal.
摘要:
A power module according to the present invention is a power module configured such that a power device chip is arranged within an outer casing and an electrode of the power device chip is connected to an external electrode that is integrated with the outer casing. The power module includes: a heat spreader fixed inside the outer casing; the power device chip solder-bonded on the heat spreader; an insulating dam formed on the heat spreader so as to surround the power device chip; and an internal main electrode having one end thereof solder-bonded to the electrode of the power device chip and the other end thereof fixed to an upper surface of the dam. The external electrode and the other end of the internal main electrode are electrically connected to each other by wire bonding.
摘要:
A semiconductor module includes: an insulating plate; a plurality of metal patterns formed on the insulating plate and spaced apart from each other; a power device chip solder-joined on one the metal pattern; a lead frame solder-joined on the metal pattern to which the power device chip is not solder-joined, and on the power device chip; an external main electrode provided to an outer casing, and joined by wire bonding to the lead frame above the metal pattern to which the power device chip is not joined; and a sealing resin formed by potting to seal the power device chip, the lead frame, and the metal patterns.
摘要:
One of the aspects of the present invention is to provide a power semiconductor device, which includes at least one pair of power modules, each of which has a molding surface covered with molding resin and a radiating surface opposite to the molding surface. Also, the power semiconductor device includes a pair of radiating fins sandwiching the power modules such that the molding surfaces of the power modules contact each other and the radiating surfaces thereof each contact the radiating fins.
摘要:
A lead frame (2a) has a die bonding pad portion (3) and an inner lead portion (4). A power element (1) is mounted on the die bonding pad portion (3) of the lead frame (2a) and is bonded to the die bonding pad portion (3) with solder (9). The power element (1) has electrodes connected through an aluminum wire (8) to the inner lead portion (4) of another lead frame (2b). A metal block (5) has a surface formed with a protrusion bonded to the lead frame (2a) in opposed relation to the power element (1). A resin package (6) has an insulation layer (7) formed on the opposite surface of the metal block (5) from the lead frame (2a), and seals the power element (1), the lead frames (2a, 2b) and the metal block (5). An external heat dissipator (11) is mounted on a surface of the insulation layer (7) opposite from the metal block (5). A semiconductor device and a method of manufacturing the same improve a heat dissipation characteristic and maintain a dielectric breakdown voltage.
摘要:
It is an object to provide a semiconductor device having an improved heat dissipation characteristic. A power element is mounted on and jointed and to a metal block through a jointing material. An insulating substrate includes a ceramic substrate and metal layers formed on both surfaces of the ceramic substrate and having thicknesses equal to each other. The metal block and the insulating substrate are provided per insulation unit of the power element. The metal layer of the insulating substrate is joined to a surface of the metal block through a jointing material opposite to a surface thereof for forming the power element. An electrode terminal is attached to a surface of the metal block having a power element joined thereto through ultrasonic junction and the like. Electrode terminals are connected to electrodes of the power element through aluminum wires. The power element, the electrode terminals and the metal block are sealed with a resin package while the metal layer of the insulating substrate remains exposed. An external heat dissipator is attached to the exposed metal layer of the insulating substrate.
摘要:
According to the present invention, it is designed in such manner that a designation minimum unit for designating a position of an effective region of an image transmitted from a camera and a designation minimum unit for designating a size of the effective region are set independently from each other so that a restriction on one of them is not extended or applied to the other. Apart from designation minimum units (C, D) for determining the extent of an image region to be transmitted (effective region), designation minimum units (I, J) for determining position of the effective region are set to values irrelevant to the designation minimum units for determining the extent of the effective region. As a result, even when there is a restriction on the setting of one of the designation minimum units, i.e. either the designation minimum unit for designating the position of the effective region or the designation minimum unit for designating the size of the effective region, it can be set in such manner that the restriction applied to one of them is not extended or applied to the other.
摘要:
A semiconductor module (18) includes a ring-shaped metal frame (13) having a bottom surface for contact with a top surface of an external heat sink (11) and serving as a mounting surface. The ring-shaped metal frame (13) has a flange (20) along an inner periphery thereof for engagement with an outer peripheral part of an insulating substrate (17) at a first main surface of a ceramic plate (1). The metal frame (13) is fastened to the external heat sink (11) by screws (12) or bonded to the external heat sink (11) with an adhesive. The flange (20) of the metal frame (13) fastened or bonded to the external heat sink (11) presses the outer peripheral part of the insulating substrate (17) toward the external heat sink (11). This pressing force holds the insulating substrate (17) in pressure contact with the external heat sink (11). The semiconductor module (18) avoids the problem of a decreasing pressing force resulting from deformation to ensure a satisfactory heat dissipating property over a long period of time.
摘要:
An electronic component includes an insulating coating that is electrically conductive when heated disposed on a portion of a surface of a semiconductor chip; electrodes disposed on the surface of the semiconductor chip elsewhere; and inner leads extending from a lead frame and anodically bonded to the insulating coating so that the inner leads are electrically coupled to the electrodes.
摘要:
A power semiconductor device is provided with a semiconductor-element substrate in which a front-surface electrode pattern is formed on a surface of an insulating substrate; semiconductor elements for electric power which are affixed to the surface of the front-surface electrode pattern; a partition wall which is provided on the front-surface electrode pattern so as to enclose the semiconductor elements for electric power; a first sealing resin member which is filled inside the partition wall; a second sealing resin member which covers the first sealing resin member and a part of the semiconductor-element substrate which is exposed from the partition wall, wherein an electrode for a relay terminal is provided on a surface of the partition wall, and a wiring from inside of the partition wall to outside of the partition wall is led out via the electrode for a relay terminal.