发明授权
- 专利标题： Semiconductor device and related manufacturing method
- 专利标题（中）： 半导体器件及相关制造方法
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申请号： US14459962申请日： 2014-08-14
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公开(公告)号： US09343435B2公开(公告)日： 2016-05-17
- 发明人: Fucheng Chen , Yao Liu , Herb He Huang
- 申请人： Semiconductor Manufacturing International (Shanghai) Corporation
- 申请人地址： CN
- 专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- 当前专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- 当前专利权人地址： CN
- 代理机构： Innovation Counsel LLP
- 优先权： CN201310753305 20131231
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L25/065 ; H01L25/00 ; H01L23/00
摘要：
A method for manufacturing a semiconductor device may include providing a first dielectric layer and a first set of conductive pads on a first substrate. Each conductive pad of the first set of conductive pads may be positioned between portions of the first dielectric layer. The method may further include providing a first insulating material layer to cover the first dielectric layer and the first set of conductive pads. The method may further include removing portions of the first insulating material layer to form a first insulating layer. Openings of the first insulating layer may expose the first set of conductive pads.
公开/授权文献
- US20150187736A1 SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD 公开/授权日：2015-07-02
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