Invention Grant
US09343627B2 Electronic device comprising semiconductor memory having ohmic-contact structure separated from current distributing layer
有权
电子设备包括具有与电流分布层分离的欧姆接触结构的半导体存储器
- Patent Title: Electronic device comprising semiconductor memory having ohmic-contact structure separated from current distributing layer
- Patent Title (中): 电子设备包括具有与电流分布层分离的欧姆接触结构的半导体存储器
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Application No.: US14495771Application Date: 2014-09-24
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Publication No.: US09343627B2Publication Date: 2016-05-17
- Inventor: Jong Hyeon Chae , Won Young Roh , Joon Sup Lee , Min Woo Kang , Jong Min Jang , Hyun A Kim , Seon Min Bae , Daewoong Suh
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: Perkins Coie LLP
- Priority: KR10-2013-0113296 20130924
- Main IPC: H01L33/36
- IPC: H01L33/36 ; H01L33/44 ; H01L33/08 ; H01L33/46

Abstract:
Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.
Public/Granted literature
- US20150084084A1 LIGHT EMITTING DIODE AND LED MODULE HAVING THE SAME Public/Granted day:2015-03-26
Information query
IPC分类: