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US09343627B2 Electronic device comprising semiconductor memory having ohmic-contact structure separated from current distributing layer 有权
电子设备包括具有与电流分布层分离的欧姆接触结构的半导体存储器

Electronic device comprising semiconductor memory having ohmic-contact structure separated from current distributing layer
Abstract:
Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.
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