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US09343672B2 Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices 有权
非易失性存储器件，非易失性存储器单元以及制造非易失性存储器件的方法

Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices
Abstract:
A nonvolatile memory cell includes first and second interlayer insulating films which are separated from each other and are stacked sequentially, a first electrode which penetrates the first interlayer insulating film and the second interlayer insulating film, a resistance change film which is formed along a side surface of the first electrode and extends parallel to the first electrode, and a second electrode which is formed between the first interlayer insulating film and the second interlayer insulating film. The second electrode includes a conductive film which is made of metal and a diffusion preventing film which prevents diffusion of a conductive material contained in the conductive film.
Abstract(Chinese):

非易失性存储单元包括彼此分离并依次堆叠的第一和第二层间绝缘膜，穿过第一层间绝缘膜和第二层间绝缘膜的第一电极，沿着侧表面形成的电阻变化膜 并且平行于第一电极延伸，以及形成在第一层间绝缘膜和第二层间绝缘膜之间的第二电极。 第二电极包括由金属制成的导电膜和防止导电膜中包含的导电材料扩散的防扩散膜。

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