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    Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices
    1.
    发明授权
    Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices 有权
    非易失性存储器件，非易失性存储器单元以及制造非易失性存储器件的方法

    公开(公告)号：US09343672B2

    公开(公告)日：2016-05-17

    申请号：US13442595

    申请日：2012-04-09

    申请人： Chan-Jin Park ,  Sun-Jung Kim ,  Soon-Oh Park ,  Hyun-Su Ju ,  Soo-Doo Chae

    发明人： Chan-Jin Park ,  Sun-Jung Kim ,  Soon-Oh Park ,  Hyun-Su Ju ,  Soo-Doo Chae

    IPC分类号： H01L45/00 ,  H01L27/24

    CPC分类号： H01L45/1253 ,  H01L27/2472 ,  H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146

    摘要： A nonvolatile memory cell includes first and second interlayer insulating films which are separated from each other and are stacked sequentially, a first electrode which penetrates the first interlayer insulating film and the second interlayer insulating film, a resistance change film which is formed along a side surface of the first electrode and extends parallel to the first electrode, and a second electrode which is formed between the first interlayer insulating film and the second interlayer insulating film. The second electrode includes a conductive film which is made of metal and a diffusion preventing film which prevents diffusion of a conductive material contained in the conductive film.

    摘要翻译： 非易失性存储单元包括彼此分离并依次堆叠的第一和第二层间绝缘膜，穿过第一层间绝缘膜和第二层间绝缘膜的第一电极，沿着侧表面形成的电阻变化膜 并且平行于第一电极延伸，以及形成在第一层间绝缘膜和第二层间绝缘膜之间的第二电极。 第二电极包括由金属制成的导电膜和防止导电膜中包含的导电材料扩散的防扩散膜。

    NONVOLATILE MEMORY CELL AND NONVOLATILE MEMORY DEVICE INCLUDING THE SAME
    3.
    发明申请
    NONVOLATILE MEMORY CELL AND NONVOLATILE MEMORY DEVICE INCLUDING THE SAME 有权
    非易失性存储器单元和非易失性存储器件，包括它们

    公开(公告)号：US20130200326A1

    公开(公告)日：2013-08-08

    申请号：US13587375

    申请日：2012-08-16

    申请人： Hyun-Su JU ,  Min-Kyu YANG ,  Eun-Mi KIM ,  Seong-Geon PARK

    发明人： Hyun-Su JU ,  Min-Kyu YANG ,  Eun-Mi KIM ,  Seong-Geon PARK

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1253 ,  H01L27/249 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/146

    摘要： According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film.

    摘要翻译： 根据示例性实施例，非易失性存储单元包括第一电极和第二电极，第一电极和第二电极之间的电阻变化膜以及与第二电极接触的第一阻挡膜。 抗蚀剂改变膜含有氧离子并与第一电极接触。 第一阻挡膜被配置为减少（和/或阻挡）来自电阻变化膜的氧离子的流出。

    Variable resistance memory devices and methods of manufacturing the same
    4.
    发明授权
    Variable resistance memory devices and methods of manufacturing the same 有权

    公开(公告)号：US09812501B2

    公开(公告)日：2017-11-07

    申请号：US14984477

    申请日：2015-12-30

    申请人： Jin-Woo Lee ,  Youn-Seon Kang ,  Seung-Jae Jung ,  Hyun-Su Ju ,  Masayuki Terai

    发明人： Jin-Woo Lee ,  Youn-Seon Kang ,  Seung-Jae Jung ,  Hyun-Su Ju ,  Masayuki Terai

    IPC分类号： H01L27/24 ,  H01L43/08 ,  H01L43/02 ,  H01L43/12 ,  H01L45/00 ,  H01L27/22

    CPC分类号： H01L27/2463 ,  H01L27/224 ,  H01L27/2409 ,  H01L43/12 ,  H01L45/1675

    摘要： A variable resistance memory device includes a plurality of first conductive layer pattern, a plurality of second conductive layer patterns over the first conductive layer patterns, and a plurality of lower cell structures including a switching element and a variable resistance element, the lower cell structures being formed at intersections at which the first conductive layer patterns and the second conductive layer patterns overlap each other. The first conductive layer patterns, the second conductive layer patterns and the lower cell structures serves as one of a memory cell, a first dummy pattern structure and a second dummy pattern structure. The first dummy pattern structure is formed on both edge portions in the first direction, and the second conductive layer pattern of the first dummy pattern structure protrudes in the first direction from a sidewall of the lower cell structure thereunder, and the second dummy pattern structure is formed on both edge portions in the second direction, and the first conductive layer pattern of the second dummy pattern structure protrudes in the second direction from a sidewall of the lower cell structure thereon. Failures of the variable resistance memory device due to the etch residue may decrease.

    VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
    5.
    发明申请
    VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    可变电阻存储器件及其制造方法

    公开(公告)号：US20160197121A1

    公开(公告)日：2016-07-07

    申请号：US14984477

    申请日：2015-12-30

    申请人： Jin-Woo LEE ,  Youn-Sean KANG ,  Seung-Jae JUNG ,  Hyun-Su JU ,  Masayuki TERAI

    发明人： Jin-Woo LEE ,  Youn-Sean KANG ,  Seung-Jae JUNG ,  Hyun-Su JU ,  Masayuki TERAI

    IPC分类号： H01L27/24 ,  H01L43/08 ,  H01L43/02 ,  H01L45/00 ,  H01L27/22

    CPC分类号： H01L27/2463 ,  H01L27/224 ,  H01L27/2409 ,  H01L43/12 ,  H01L45/1675

    摘要： A variable resistance memory device includes a plurality of first conductive layer pattern, a plurality of second conductive layer patterns over the first conductive layer patterns, and a plurality of lower cell structures including a switching element and a variable resistance element, the lower cell structures being formed at intersections at which the first conductive layer patterns and the second conductive layer patterns overlap each other. The first conductive layer patterns, the second conductive layer patterns and the lower cell structures serves as one of a memory cell, a first dummy pattern structure and a second dummy pattern structure. The first dummy pattern structure is formed on both edge portions in the first direction, and the second conductive layer pattern of the first dummy pattern structure protrudes in the first direction from a sidewall of the lower cell structure thereunder, and the second dummy pattern structure is formed on both edge portions in the second direction, and the first conductive layer pattern of the second dummy pattern structure protrudes in the second direction from a sidewall of the lower cell structure thereon. Failures of the variable resistance memory device due to the etch residue may decrease.

    摘要翻译： 可变电阻存储器件包括多个第一导电层图案，多个第一导电层图案上的第二导电层图案，以及包括开关元件和可变电阻元件的多个下单元结构，下单元结构为 形成在第一导电层图案和第二导电层图案彼此重叠的交点处。 第一导电层图案，第二导电层图案和下单元结构用作存储单元，第一虚设图案结构和第二虚设图案结构之一。 第一虚设图形结构形成在第一方向的两个边缘部分上，第一虚设图案结构的第二导电层图案从其下部单元结构的侧壁沿第一方向突出，第二虚设图案结构为 形成在第二方向的两个边缘部分上，并且第二虚设图案结构的第一导电层图案在其下面的单元结构的侧壁上沿第二方向突出。 由于蚀刻残留导致的可变电阻存储器件的故障可能降低。

    NON-VOLATILE MEMORY DEVICE HAVING VARIABLE RESISTANCE ELEMENT AND METHOD OF FABRICATING THE SAME
    7.
    发明申请
    NON-VOLATILE MEMORY DEVICE HAVING VARIABLE RESISTANCE ELEMENT AND METHOD OF FABRICATING THE SAME 有权
    具有可变电阻元件的非易失性存储器件及其制造方法

    公开(公告)号：US20130009122A1

    公开(公告)日：2013-01-10

    申请号：US13462844

    申请日：2012-05-03

    申请人： CHAN-JIN PARK ,  HYUN-SU JU ,  IN-GYU BAEK

    发明人： CHAN-JIN PARK ,  HYUN-SU JU ,  IN-GYU BAEK

    IPC分类号： H01L47/00

    CPC分类号： H01L27/2409 ,  H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A non-volatile memory device includes a lower molding layer, a horizontal interconnection line on the lower molding layer, an upper molding layer on the horizontal interconnection line, pillars extending vertically through the upper molding layer, the horizontal interconnection line, and the lower molding layer, and a buffer layer interposed between the pillars and the molding layers. The device also includes variable resistance material and a diode layer interposed between the pillars and the horizontal interconnection line.

    摘要翻译： 非易失性存储器件包括下成型层，下成型层上的水平互连线，水平互连线上的上成型层，垂直穿过上成型层，水平互连线和下成型件的柱 层和介于柱和成型层之间的缓冲层。 该装置还包括可变电阻材料和插在支柱和水平互连线之间的二极管层。

    NONVOLATILE MEMORY DEVICES, NONVOLATILE MEMORY CELLS AND METHODS OF MANUFACTURING NONVOLATILE MEMORY DEVICES
    8.
    发明申请
    NONVOLATILE MEMORY DEVICES, NONVOLATILE MEMORY CELLS AND METHODS OF MANUFACTURING NONVOLATILE MEMORY DEVICES 有权
    非易失性存储器件，非易失性存储器单元和制造非易失性存储器件的方法

    公开(公告)号：US20120313066A1

    公开(公告)日：2012-12-13

    申请号：US13442595

    申请日：2012-04-09

    申请人： Chan-Jin Park ,  Sun-Jung Kim ,  Soon-Oh Park ,  Hyun-Su Ju ,  Soo-Doo Chae

    发明人： Chan-Jin Park ,  Sun-Jung Kim ,  Soon-Oh Park ,  Hyun-Su Ju ,  Soo-Doo Chae

    IPC分类号： H01L47/00 ,  H01L21/02

    CPC分类号： H01L45/1253 ,  H01L27/2472 ,  H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146

    摘要： A nonvolatile memory cell includes first and second interlayer insulating films which are separated from each other and are stacked sequentially, a first electrode which penetrates the first interlayer insulating film and the second interlayer insulating film, a resistance change film which is formed along a side surface of the first electrode and extends parallel to the first electrode, and a second electrode which is formed between the first interlayer insulating film and the second interlayer insulating film. The second electrode includes a conductive film which is made of metal and a diffusion preventing film which prevents diffusion of a conductive material contained in the conductive film.

    摘要翻译： 非易失性存储单元包括彼此分离并依次堆叠的第一和第二层间绝缘膜，穿过第一层间绝缘膜和第二层间绝缘膜的第一电极，沿着侧表面形成的电阻变化膜 并且平行于第一电极延伸，以及形成在第一层间绝缘膜和第二层间绝缘膜之间的第二电极。 第二电极包括由金属制成的导电膜和防止导电膜中包含的导电材料扩散的防扩散膜。

    Non-volatile memory device having a resistance-changeable element and method of forming the same
    9.
    发明授权
    Non-volatile memory device having a resistance-changeable element and method of forming the same 有权
    具有电阻可变元件的非易失性存储器件及其形成方法

    公开(公告)号：US08884262B2

    公开(公告)日：2014-11-11

    申请号：US13487570

    申请日：2012-06-04

    申请人： Hyun-Su Ju ,  Sun-Jung Kim ,  Soo-Doo Chae

    发明人： Hyun-Su Ju ,  Sun-Jung Kim ,  Soo-Doo Chae

    IPC分类号： H01L29/06 ,  H01L27/24 ,  H01L45/00

    CPC分类号： H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146

    摘要： A non-volatile memory device is provided wherein a lower molding layer is formed on a substrate; a first horizontal interconnection is formed on the lower molding layer; an upper molding layer is formed on the first horizontal interconnection; a pillar is formed connected to the substrate by vertically passing through the upper molding layer, the first horizontal interconnection and the lower molding layer. The pillar has a lower part and an upper part, wherein the lower part is disposed on the same level as the first horizontal interconnection and has a first width and the upper part is disposed on a higher level than the first horizontal interconnection and has a second width different from the first width.

    摘要翻译： 提供了一种非易失性存储器件，其中在基底上形成下模制层; 在下模制层上形成第一水平互连; 上模塑层形成在第一水平互连上; 通过垂直地穿过上模制层，第一水平互连和下模制层而形成连接到基板的支柱。 所述支柱具有下部和上部，其中所述下部设置在与所述第一水平互连相同的高度上并具有第一宽度，并且所述上部设置在比所述第一水平互连更高的高度上，并且具有第二 宽度与第一宽度不同。

    NON-VOLATILE MEMORY DEVICE HAVING A RESISTANCE-CHANGEABLE ELEMENT AND METHOD OF FORMING THE SAME
    10.
    发明申请
    NON-VOLATILE MEMORY DEVICE HAVING A RESISTANCE-CHANGEABLE ELEMENT AND METHOD OF FORMING THE SAME 有权
    具有电阻可变元件的非易失性存储器件及其形成方法

    公开(公告)号：US20120305877A1

    公开(公告)日：2012-12-06

    申请号：US13487570

    申请日：2012-06-04

    申请人： Hyun-Su Ju ,  Sun-Jung Kim ,  Soo-Doo Chae

    发明人： Hyun-Su Ju ,  Sun-Jung Kim ,  Soo-Doo Chae

    IPC分类号： H01L47/00

    CPC分类号： H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146

    摘要： A non-volatile memory device is provided wherein a lower molding layer is formed on a substrate; a first horizontal interconnection is formed on the lower molding layer; an upper molding layer is formed on the first horizontal interconnection; a pillar is formed connected to the substrate by vertically passing through the upper molding layer, the first horizontal interconnection and the lower molding layer. The pillar has a lower part and an upper part, wherein the lower part is disposed on the same level as the first horizontal interconnection and has a first width and the upper part is disposed on a higher level than the first horizontal interconnection and has a second width different from the first width.

    摘要翻译： 提供了一种非易失性存储器件，其中在基底上形成下模制层; 在下模制层上形成第一水平互连; 上模塑层形成在第一水平互连上; 通过垂直地穿过上模制层，第一水平互连和下模制层而形成连接到基板的支柱。 支柱具有下部和上部，其中下部设置在与第一水平互连相同的高度上并具有第一宽度，并且上部设置在比第一水平互连更高的高度上，并且具有第二 宽度与第一宽度不同。