Invention Grant
- Patent Title: Semiconductor laser diode with integrated heating region
- Patent Title (中): 具有集成加热区域的半导体激光二极管
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Application No.: US14501751Application Date: 2014-09-30
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Publication No.: US09343870B2Publication Date: 2016-05-17
- Inventor: Jun Zheng , Klaus Alexander Anselm , Huanlin Zhang , Hung-Lun Chang
- Applicant: Applied Optoelectronics, Inc.
- Applicant Address: US TX Sugar Land
- Assignee: Applied Optoelectronics, Inc.
- Current Assignee: Applied Optoelectronics, Inc.
- Current Assignee Address: US TX Sugar Land
- Agency: Grossman Tucker Perreault & Pfleger, PLLC
- Agent Norman S. Kinsella
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/024 ; H01S5/026 ; H01S5/042 ; H01S5/20 ; H01S5/10 ; H01S5/12 ; H01S5/40 ; G02B6/12 ; H04B10/50

Abstract:
A semiconductor laser diode with integrated heating generally includes a lasing region and a heating region integrated into the same semiconductor structure or chip. The lasing region and the heating region include first and second portions, respectively, of the semiconductor layers forming the semiconductor structure and include first and second portions, respectively, of the active regions formed by the semiconductor layers. Separate laser and heater electrodes are electrically connected to the respective lasing and heating regions for driving the respective lasing and heating regions with drive currents. The heating region may thus be driven independently from the lasing region, and heat may be conducted through the semiconductor layers from the heating region to the lasing region allowing the temperature to be controlled more efficiently.
Public/Granted literature
- US20160094013A1 SEMICONDUCTOR LASER DIODE WITH INTEGRATED HEATING REGION Public/Granted day:2016-03-31
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