Invention Grant
- Patent Title: Facet on a gallium and nitrogen containing laser diode
- Patent Title (中): 含氮和氮的激光二极管的方面
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Application No.: US13850187Application Date: 2013-03-25
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Publication No.: US09343871B1Publication Date: 2016-05-17
- Inventor: James W. Raring , Hua Huang
- Applicant: SORAA, INC.
- Applicant Address: US CA Goleta
- Assignee: Soraa Laser Diode, Inc.
- Current Assignee: Soraa Laser Diode, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01S5/028
- IPC: H01S5/028
Abstract:
Nonpolar or semipolar laser diode technology incorporating etched facet mirror formation and conventional optical coating layer techniques for reflectivity modification to enable a method for ultra-high catastrophic optical mirror damage thresholds for high power laser diodes are disclosed.
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