公开(公告)号：US10400352B2

公开(公告)日：2019-09-03

申请号：US15426770

申请日：2017-02-07

Applicant: Soraa, Inc.

Inventor： Mark P. D'Evelyn ,  James S. Speck ,  Derrick S. Kamber ,  Douglas W. Pocius

IPC: C30B7/10 ,  H01L21/02 ,  H01L29/20 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B33/06 ,  C30B19/06 ,  C30B19/12

Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

公开(公告)号：US20190195441A1

公开(公告)日：2019-06-27

申请号：US16203045

申请日：2018-11-28

Applicant: SORAA, INC.

Inventor： Aurelien J.F. David ,  Troy A. Trottier ,  Michael R. Krames

IPC: F21K9/64 ,  F21V23/02 ,  F21K9/232 ,  F21K9/27 ,  F21K9/23 ,  F21V23/04 ,  H01L33/32 ,  H01L33/48 ,  H01L33/50 ,  F21V29/70 ,  H01L33/60 ,  H01L25/075 ,  F21V9/30 ,  F21V13/08 ,  F21V3/00 ,  F21V7/04 ,  F21K9/62 ,  F21K9/233 ,  H01L27/15

CPC classification number: F21K9/64 ,  F21K9/23 ,  F21K9/232 ,  F21K9/233 ,  F21K9/27 ,  F21K9/62 ,  F21V3/00 ,  F21V7/04 ,  F21V9/30 ,  F21V13/08 ,  F21V23/02 ,  F21V23/04 ,  F21V29/70 ,  F21Y2101/00 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/20 ,  H01L33/32 ,  H01L33/483 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.

公开(公告)号：US10309620B2

公开(公告)日：2019-06-04

申请号：US15344206

申请日：2016-11-04

Applicant: SORAA, INC.

Inventor： Frank Tin Chung Shum ,  Artem Mishin ,  Zinovy Dolgonosov ,  Clifford Jue ,  Abdul Assaad ,  Aurelien J. F. David ,  Wilfred Martis

IPC: F21V17/10 ,  F21V29/83 ,  F21K9/23 ,  F21K9/233 ,  F21K9/60 ,  F21V29/77 ,  F21K9/238 ,  F21K9/232 ,  F21K9/235 ,  F21K9/237 ,  F21V5/04 ,  F21V7/00 ,  F21V23/00 ,  F21V23/06 ,  H05B37/02 ,  F21Y115/10 ,  F21V9/08 ,  F21V9/14

Abstract: Accessories for LED lamp systems and methods of attaching accessories to illumination sources (e.g., LED lamps) are disclosed. A beam shaping accessories mechanically affixed to the LED lamp. The lens is designed to adapt to a first fixture that is mechanically attached to the lens. Accessories are designed to have a second fixture for mating to the first fixture such that the first fixture and the second fixture are configured to produce a retaining force between the first accessory and the lens. The retaining force is a mechanical force that is accomplished by mechanical mating of mechanical fixtures, or the retaining force is a magnetic force and is accomplished by magnetic fixtures configured to have attracting magnetic forces. In some embodiments, the accessory is treated to modulate an emanated light pattern (e.g., a rectangular, or square, or oval, or circular or diffused emanated light pattern). A USB connector is also provided.

公开(公告)号：US20190140150A1

公开(公告)日：2019-05-09

申请号：US16154853

申请日：2018-10-09

Applicant: SORAA, INC.

Inventor： AURELIEN J. F. DAVID ,  MICHAEL J. GRUNDMANN

IPC: H01L33/58 ,  H01L33/32 ,  H01L33/04 ,  H01L33/00 ,  H01L33/02

Abstract: A light-emitting diode (LED) for emitting emitted light having a particular wavelength, said LED comprising: (a) at least one n-doped layer; (b) at least one p-doped layer; (c) an active region comprising at least one layer of light-emitting material disposed between said at least one n-doped layer and said at least one p-doped layer, said active region having an average refractive index, calculated by averaging the LED's refractive index across the thickness of the active region; and (d) at least one low refractive index layer disposed within said particular wavelength of said active region, said at least one low refractive index layer having a refractive index below said average refractive index and a thickness sufficient to limit light being emitted into a guided mode of said active region to no more than 10% of said emitted light.

公开(公告)号：US10271400B2

公开(公告)日：2019-04-23

申请号：US15135287

申请日：2016-04-21

Applicant: SORAA, INC.

Inventor： Jeffery Robert Parker ,  Laszlo Andrew Takacs ,  Aurelien J. F. David

IPC: G05B21/00 ,  G01M1/38 ,  G05B13/00 ,  G05B15/00 ,  G05D23/00 ,  H05B33/08 ,  G05B13/02 ,  A61B5/0205 ,  A61B5/0402 ,  A61B5/0476 ,  H05B37/02 ,  A61B5/04 ,  A61B3/11 ,  A61B5/103 ,  A61B5/021 ,  A61B5/024 ,  A61B5/053 ,  A61B5/00 ,  A61B5/01 ,  A61B5/0482 ,  A61B5/1455

Abstract: In one embodiment, a method comprising: (a) receiving a set of physiological data associated with at least one health condition of an animal subject; (b) receiving a set of environmental data associated with one or more environment conditions to which the subject is or has been exposed; (c) determining a set of operating parameters for at least one environmental device based at least partially on at least a portion of the set of physiological data and at least a portion of the set of environmental data; and (d) transmitting the set of operating parameters to the at least one environmental device to at least partially control at least one controlled environmental condition to which the subject is exposed to thereby at partially control the at least one health condition.

公开(公告)号：US10270489B2

公开(公告)日：2019-04-23

申请号：US15851125

申请日：2017-12-21

Applicant: Soraa, Inc.

Inventor： Phil Kearney ,  Laszlo Takacs ,  Michael Larson ,  Artem Mishin

IPC: H04B3/54 ,  H04L25/02 ,  G05B15/02 ,  H04L12/66 ,  H05B37/02

Abstract: A system comprising: a host device comprising at least, an electrical interface configured for connection to a powerline; a first releasable interface; a powerline communication module for transmitting and receiving information over the powerline; an intelligent module comprising at least, a second releasable interface interconnected to the first releasable interface; a digital processor; memory operatively connected to the processor and configured with instructions for causing the processor to receive and transmit information over the powerline through the powerline communication module.

公开(公告)号：US10154552B2

公开(公告)日：2018-12-11

申请号：US14944097

申请日：2015-11-17

Applicant: Soraa, Inc.

Inventor： Laszlo Takacs

IPC: H05B33/08

Abstract: A voltage control system for an LED operates to dynamically determine and set a minimum permissible voltage on an energy storage device such as a capacitor such that the energy storage device operates at a minimum possible voltage to compensate for component variations and dimming signal variations while maintaining flicker-free operation of the LED.

公开(公告)号：US10147850B1

公开(公告)日：2018-12-04

申请号：US14531545

申请日：2014-11-03

Applicant: Soraa, Inc.

Inventor： Michael R. Krames ,  Troy Trottier ,  Frank M. Steranka ,  William D. Houck ,  Arpan Chakraborty

IPC: H01L33/50 ,  H01L27/15 ,  H01L25/075 ,  F21K9/64 ,  F21Y113/13 ,  F21Y101/00

Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.

公开(公告)号：US20180320833A1

公开(公告)日：2018-11-08

申请号：US16031144

申请日：2018-07-10

Applicant: SORAA, INC.

Inventor： Aurelien J.F. DAVID ,  Troy A. TROTTIER ,  Michael R. KRAMES

IPC: F21K9/64 ,  H01L33/60 ,  F21K9/233 ,  F21K9/23 ,  F21K9/62 ,  F21K9/232 ,  F21V29/70 ,  H01L33/50 ,  H01L33/48 ,  H01L33/32 ,  H01L27/15 ,  H01L25/075 ,  F21V23/04 ,  F21V23/02 ,  F21V13/08 ,  F21V7/04 ,  F21V3/00 ,  F21V9/30 ,  F21K9/27 ,  F21Y113/13 ,  H01L33/20 ,  F21Y101/00 ,  F21Y115/10

CPC classification number: F21K9/64 ,  F21K9/23 ,  F21K9/232 ,  F21K9/233 ,  F21K9/27 ,  F21K9/62 ,  F21V3/00 ,  F21V7/04 ,  F21V9/30 ,  F21V13/08 ,  F21V23/02 ,  F21V23/04 ,  F21V29/70 ,  F21Y2101/00 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/20 ,  H01L33/32 ,  H01L33/483 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.

公开(公告)号：US10115865B2

公开(公告)日：2018-10-30

申请号：US15785950

申请日：2017-10-17

Applicant: SORAA, INC.

Inventor： Michael J. Cich ,  Aurelien J. F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

IPC: H01L33/32 ,  H01L33/48 ,  H01L33/62 ,  H01L33/60 ,  H01L33/40 ,  H01L33/20 ,  H01L33/16

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.