Invention Grant
- Patent Title: Lanthanum target for sputtering
- Patent Title (中): 用于溅射的镧靶
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Application No.: US13147837Application Date: 2010-03-17
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Publication No.: US09347130B2Publication Date: 2016-05-24
- Inventor: Shiro Tsukamoto , Tomio Otsuki
- Applicant: Shiro Tsukamoto , Tomio Otsuki
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2009-078836 20090327
- International Application: PCT/JP2010/054493 WO 20100317
- International Announcement: WO2010/110134 WO 20100930
- Main IPC: C23C14/14
- IPC: C23C14/14 ; B22D21/00 ; B22D7/00 ; B22D25/02 ; C23C14/34 ; C22C28/00 ; C22F1/16 ; C23C14/08

Abstract:
Provided are a lanthanum target for sputtering which has a Vickers hardness of 60 or more and no spotty macro patterns on the surface, and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to upset forging at 300 to 500° C. to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target. This invention aims to offer technology for efficiently and stably providing a lanthanum target for sputtering that has no spotty macro patterns on the surface, and a method of producing the same.
Public/Granted literature
- US20110290644A1 Lanthanum Target for Sputtering Public/Granted day:2011-12-01
Information query
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