- 专利标题： Nonvolatile memory devices and driving methods thereof
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申请号： US14887595申请日： 2015-10-20
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公开(公告)号： US09349455B2公开(公告)日： 2016-05-24
- 发明人: Kyung-Hwa Kang , Sang-Wan Nam , Donghyuk Chae , ChiWeon Yoon
- 申请人： Kyung-Hwa Kang , Sang-Wan Nam , Donghyuk Chae , ChiWeon Yoon
- 申请人地址： KR Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2011-0011608 20110209
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C16/08 ; H01L27/115
摘要：
Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.
公开/授权文献
- US20160042792A1 NONVOLATILE MEMORY DEVICES AND DRIVING METHODS THEREOF 公开/授权日：2016-02-11
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