Apparatuses, current control circuits, and methods for limiting string current in a memory are described. An example apparatus includes a memory cell string including a memory cell. The example apparatus further includes a sense circuit configured to sense a current through the memory cell string, and a select gate configured to couple the memory cell string to a source based on a select gate voltage. The example apparatus further includes a current control circuit coupled to the select gate. The current control circuit is configured to limit current through the memory cell string during a memory access operation based on a reference current.