Invention Grant
- Patent Title: Semiconductor devices and methods of manufacturing the same
- Patent Title (中): 半导体器件及其制造方法
-
Application No.: US14563269Application Date: 2014-12-08
-
Publication No.: US09349633B2Publication Date: 2016-05-24
- Inventor: Dae-Ik Kim , Sung-Eui Kim , Hyoung-Sub Kim , Sung-Kwan Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0151158 20131206
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L27/108 ; H01L49/02

Abstract:
A method of manufacturing a semiconductor device includes forming an isolation layer on a substrate, where an active pattern is defined, forming an insulating interlayer on the active pattern of the substrate and the isolation layer, removing portions of the insulating interlayer, the active pattern and the isolation layer to form a first recess, forming a first contact in the first recess on a first region of the active pattern exposed by the first recess, removing portions of the active pattern and the isolation layer in the first recess by performing an isotropic etching process, to form an enlarged first recess, and filling the enlarged first recess to form a first spacer that surrounds a sidewall of the first contact.
Public/Granted literature
- US20150162335A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2015-06-11
Information query
IPC分类: