Invention Grant
- Patent Title: ESD snapback based clamp for finFET
- Patent Title (中): 用于finFET的基于ESD snapback的钳位
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Application No.: US14469155Application Date: 2014-08-26
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Publication No.: US09349718B2Publication Date: 2016-05-24
- Inventor: Jagar Singh , Andy Wei , Mahadeva Iyer Natarajan , Manjunatha Prabhu , Anil Kumar
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Kristian E. Ziegler
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/78 ; H01L29/66
Abstract:
There is set forth herein a field effect transistor (FET) configured as an ESD protection device. In one embodiment, the FET can be configured to operate in a snapback operating mode. The FET can include a semiconductor substrate, a gate formed on the substrate and a dummy gate formed on the substrate spaced apart from the gate.
Public/Granted literature
- US20160064372A1 ESD SNAPBACK BASED CLAMP FOR FINFET Public/Granted day:2016-03-03
Information query
IPC分类:
