Invention Grant
US09349818B2 Metal-oxide-semiconductor transistor device having a drain side dummy contact
有权
具有漏极侧虚拟接触的金属氧化物半导体晶体管器件
- Patent Title: Metal-oxide-semiconductor transistor device having a drain side dummy contact
- Patent Title (中): 具有漏极侧虚拟接触的金属氧化物半导体晶体管器件
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Application No.: US14519153Application Date: 2014-10-21
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Publication No.: US09349818B2Publication Date: 2016-05-24
- Inventor: Kun-Huang Yu , Shih-Yin Hsiao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/423 ; H01L29/78 ; H01L29/06
Abstract:
A MOS transistor device includes a substrate including a gate formed thereon, and a spacer being formed on a sidewall of the gate; a source region and a drain region formed in the substrate; and at least a first dummy contact formed above the substrate on a drain side of the gate. More important, the first dummy contact is formed apart from a surface of the substrate.
Public/Granted literature
- US20160111509A1 METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE HAVING A DRAIN SIDE DUMMY CONTACT Public/Granted day:2016-04-21
Information query
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