Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14794898Application Date: 2015-07-09
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Publication No.: US09349834B2Publication Date: 2016-05-24
- Inventor: Andreas Meiser , Till Schloesser , Thorsten Meyer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L29/78 ; H01L21/28

Abstract:
A method of manufacturing a semiconductor device includes forming a transistor in a semiconductor substrate having a first main surface. The transistor is formed by forming a source region, forming a drain region, forming a channel region, forming a drift zone, and forming a gate electrode adjacent to at least two sides of the channel region. The channel region and the drift zone are disposed along a first direction parallel to the first main surface, between the source region and the drain region. Forming the semiconductor device further includes forming a conductive layer, a portion of the conductive layer being disposed beneath the gate electrode and insulated from the gate electrode.
Public/Granted literature
- US20150311317A1 Method of Manufacturing a Semiconductor Device Public/Granted day:2015-10-29
Information query
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