发明授权
- 专利标题: Stress relieved high power RF circuit
- 专利标题(中): 应力消除大功率RF电路
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申请号: US14457653申请日: 2014-08-12
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公开(公告)号: US09350062B2公开(公告)日: 2016-05-24
- 发明人: Hans P. Ostergaard , Michael J. Len , Chong Mei , Brian K. Buyea
- 申请人: Anaren, Inc.
- 申请人地址: US NY East Syracuse
- 专利权人: ANAREN, INC.
- 当前专利权人: ANAREN, INC.
- 当前专利权人地址: US NY East Syracuse
- 代理机构: Bond Schoeneck & King, PLLC
- 代理商 Daniel Malley; George McGuire
- 主分类号: H01P3/08
- IPC分类号: H01P3/08 ; H01P11/00 ; H01L23/498 ; H01L23/66 ; H01P1/203 ; H05K1/03
摘要:
The present invention is directed to an RF device that includes a laminate structure having a ceramic layer having a predetermined thermal conductivity that is a function of a predetermined RF device operating temperature. The ceramic layer forms a first major surface of the laminate structure and a second major ceramic surface is bonded to a layer of thermoplastic material that is, in turn, bonded to a conductive layer. The thermoplastic material has a coefficient of thermal expansion that substantially matches the conductive layer. A first circuit arrangement is disposed on the first major surface of the laminate structure and it includes a first RF circuit structure having a predetermined geometry and predetermined electrical characteristics. The laminate structure is configured to dissipate thermal energy generated by the at least one first RF circuit structure via substantially the entire second major surface of the laminate structure.
公开/授权文献
- US20160049713A1 Stress Relieved High Power RF Circuit 公开/授权日:2016-02-18
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