Stress relieved high power RF circuit
    1.
    发明授权
    Stress relieved high power RF circuit 有权
    应力消除大功率RF电路

    公开(公告)号:US09350062B2

    公开(公告)日:2016-05-24

    申请号:US14457653

    申请日:2014-08-12

    申请人: Anaren, Inc.

    摘要: The present invention is directed to an RF device that includes a laminate structure having a ceramic layer having a predetermined thermal conductivity that is a function of a predetermined RF device operating temperature. The ceramic layer forms a first major surface of the laminate structure and a second major ceramic surface is bonded to a layer of thermoplastic material that is, in turn, bonded to a conductive layer. The thermoplastic material has a coefficient of thermal expansion that substantially matches the conductive layer. A first circuit arrangement is disposed on the first major surface of the laminate structure and it includes a first RF circuit structure having a predetermined geometry and predetermined electrical characteristics. The laminate structure is configured to dissipate thermal energy generated by the at least one first RF circuit structure via substantially the entire second major surface of the laminate structure.

    摘要翻译: 本发明涉及一种RF器件,其包括具有预定的热导率的陶瓷层的叠层结构,其是预定的RF器件工作温度的函数。 陶瓷层形成层压结构的第一主表面,并且第二主要陶瓷表面被结合到热塑性材料层上,该热塑性材料层又结合到导电层。 热塑性材料具有与导电层基本一致的热膨胀系数。 第一电路布置设置在层压结构的第一主表面上,并且其包括具有预定几何形状和预定电特性的第一RF电路结构。 层压结构被配置成通过层压结构的基本上整个第二主表面消散由至少一个第一RF电路结构产生的热能。

    Stress Relieved High Power RF Circuit
    2.
    发明申请
    Stress Relieved High Power RF Circuit 有权
    应力消除大功率RF电路

    公开(公告)号:US20160049713A1

    公开(公告)日:2016-02-18

    申请号:US14457653

    申请日:2014-08-12

    申请人: ANAREN, INC.

    IPC分类号: H01P3/08 H01P11/00

    摘要: The present invention is directed to an RF device that includes a laminate structure having a ceramic layer having a predetermined thermal conductivity that is a function of a predetermined RF device operating temperature. The ceramic layer forms a first major surface of the laminate structure and a second major ceramic surface is bonded to a layer of thermoplastic material that is, in turn, bonded to a conductive layer. The thermoplastic material has a coefficient of thermal expansion that substantially matches the conductive layer. A first circuit arrangement is disposed on the first major surface of the laminate structure and it includes a first RF circuit structure having a predetermined geometry and predetermined electrical characteristics. The laminate structure is configured to dissipate thermal energy generated by the at least one first RF circuit structure via substantially the entire second major surface of the laminate structure.

    摘要翻译: 本发明涉及一种RF器件,其包括具有预定的热导率的陶瓷层的叠层结构,其是预定的RF器件工作温度的函数。 陶瓷层形成层压结构的第一主表面,并且第二主要陶瓷表面被结合到热塑性材料层上,该热塑性材料层又结合到导电层。 热塑性材料具有与导电层基本一致的热膨胀系数。 第一电路布置设置在层压结构的第一主表面上,并且其包括具有预定几何形状和预定电特性的第一RF电路结构。 层压结构被配置成通过层压结构的基本上整个第二主表面消散由至少一个第一RF电路结构产生的热能。

    High power RF circuit
    3.
    发明授权
    High power RF circuit 有权
    大功率射频电路

    公开(公告)号:US08969733B1

    公开(公告)日:2015-03-03

    申请号:US14041155

    申请日:2013-09-30

    申请人: Anaren, Inc.

    摘要: The present invention is directed to an RF device that includes a ceramic layer characterized by a ceramic layer dielectric constant and includes an RF circuit arrangement having a predetermined geometry and predetermined electrical characteristics. The ceramic layer dissipates thermal energy generated by the RF circuit via substantially the entire ceramic surface area. A first dielectric layer comprises a thermoplastic material and has a predetermined first thickness and a first dielectric constant. The predetermined electrical characteristics of the RF circuit arrangement are a function of the ceramic layer dielectric constant. A relative softness of the thermoplastic material is a function of the RF device operating temperature.

    摘要翻译: 本发明涉及一种RF器件,其包括以陶瓷层介电常数为特征的陶瓷层,并且包括具有预定几何形状和预定电特性的RF电路装置。 陶瓷层通过基本上整个陶瓷表面积消散由RF电路产生的热能。 第一介电层包括热塑性材料并具有预定的第一厚度和第一介电常数。 RF电路装置的预定电特性是陶瓷层介电常数的函数。 热塑性材料的相对柔软度是RF器件工作温度的函数。