Invention Grant
- Patent Title: Method for making a semi-conducting substrate located on an insulation layer
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Application No.: US13907547Application Date: 2013-05-31
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Publication No.: US09356094B2Publication Date: 2016-05-31
- Inventor: Aomar Halimaoui , Daniel Bensahel
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Seed IP Law Group PLLC
- Priority: FR0757916 20070928
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/02 ; H01L29/06 ; H01L21/762 ; H01L21/764 ; H01L21/02
Abstract:
A method for making a silicon layer extending on an insulation layer, including the steps of forming a silicon-germanium layer on at least a portion of a silicon wafer; transforming portions of the silicon-germanium layer into porous silicon pads; growing a monocrystalline silicon layer on the silicon-germanium layer and on the porous silicon pads; removing the silicon-germanium layer; oxidizing the porous silicon pads; and depositing an insulation material on the silicon layer.
Public/Granted literature
- US20130264678A1 METHOD FOR MAKING A SEMI-CONDUCTING SUBSTRATE LOCATED ON AN INSULATION LAYER Public/Granted day:2013-10-10
Information query
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