Invention Grant
- Patent Title: Thin film transistor, display panel having the same and method of manufacturing the same
- Patent Title (中): 薄膜晶体管，显示面板及其制造方法
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Application No.: US14452261Application Date: 2014-08-05
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Publication No.: US09356153B2Publication Date: 2016-05-31
- Inventor: Yoon-Ho Khang , Dong-Jo Kim , Su-Hyoung Kang , Yong-Su Lee
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0124353 20131018
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/336
Abstract:
A thin film transistor includes a bottom gate electrode, a top gate electrode and an active pattern. The top gate electrode includes a transparent conductive material and overlaps with the bottom gate electrode. A boundary of the bottom gate electrode and a boundary of the top gate electrode are coincident with each other in a cross-sectional view. The active pattern includes a source portion, a drain portion and a channel portion disposed between the source portion and the drain portion. The channel portion overlaps with the bottom gate electrode and the top gate electrode.
Public/Granted literature
- US20150108481A1 THIN FILM TRANSISTOR, DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-04-23
Information query
IPC分类:
