发明授权
- 专利标题: Method of manufacture of homodispersed silicon carbide-derived carbon composites
- 专利标题(中): 均质碳化硅衍生的碳复合材料的制造方法
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申请号: US13822951申请日: 2011-09-13
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公开(公告)号: US09356282B2公开(公告)日: 2016-05-31
- 发明人: Jaan Leis , Mati Arulepp
- 申请人: Jaan Leis , Mati Arulepp
- 申请人地址: EE Tallinn
- 专利权人: OÜ SKELETON TECHNOLOGIES GROUP
- 当前专利权人: OÜ SKELETON TECHNOLOGIES GROUP
- 当前专利权人地址: EE Tallinn
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: EE201000073 20100913
- 国际申请: PCT/IB2011/002289 WO 20110913
- 国际公布: WO2012/035424 WO 20120322
- 主分类号: H01B1/02
- IPC分类号: H01B1/02 ; H01M4/1395 ; C01B31/36 ; C04B35/628 ; H01M4/36 ; H01M4/587 ; H01B1/04 ; H01M10/0525
摘要:
The present invention concerns a method of manufacture of the homodispersed composite of the synthetic carbon material derived from carbide and silicon where the powder of the carbon material is first dispersed mechanically with the powder of silicon to homodispersed mixture, then the homodispersed mixture of the carbon material and silicon is sintered in an inert environment at a temperature between 1200 to 1500° C. to synthetic homodispersed composite of the silicon carbide and silicon. The homodispersed composite of the silicon carbide and silicon is heated in an inert environment at a temperature between 800 to 1100° C. and then the homodispersed composite of the silicon carbide and silicon is chlorinated at a temperature from 800 to 100° C.
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