发明授权
US09356282B2 Method of manufacture of homodispersed silicon carbide-derived carbon composites 有权
均质碳化硅衍生的碳复合材料的制造方法

Method of manufacture of homodispersed silicon carbide-derived carbon composites
摘要:
The present invention concerns a method of manufacture of the homodispersed composite of the synthetic carbon material derived from carbide and silicon where the powder of the carbon material is first dispersed mechanically with the powder of silicon to homodispersed mixture, then the homodispersed mixture of the carbon material and silicon is sintered in an inert environment at a temperature between 1200 to 1500° C. to synthetic homodispersed composite of the silicon carbide and silicon. The homodispersed composite of the silicon carbide and silicon is heated in an inert environment at a temperature between 800 to 1100° C. and then the homodispersed composite of the silicon carbide and silicon is chlorinated at a temperature from 800 to 100° C.
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