Invention Grant
- Patent Title: High moment side shield design for area density improvement of perpendicular magnetic recording (PMR) writer
- Patent Title (中): 垂直磁记录(PMR)作者的面积密度改善的高矩侧面设计
-
Application No.: US14690693Application Date: 2015-04-20
-
Publication No.: US09361912B1Publication Date: 2016-06-07
- Inventor: Yue Liu , Atsushi Yamaguchi , Yuhui Tang , Jiun-Ting Lee , Yaguang Wei , Xiaomin Liu , Hideyuki Ukita , Moris Dovek , Michitaka Nishiyama
- Applicant: Headway Technologies, Inc. , TDK Corporation
- Applicant Address: US CA Milpitas JP Tokyo
- Assignee: Headway Technologies, Inc.,TDK Corporation
- Current Assignee: Headway Technologies, Inc.,TDK Corporation
- Current Assignee Address: US CA Milpitas JP Tokyo
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/187
- IPC: G11B5/187 ; G11B5/39 ; G11B5/31 ; G11B5/008 ; G11B5/127 ; G11B5/11

Abstract:
A PMR writer is disclosed wherein a hot seed layer (HS) made of a 19-24 kilogauss (kG) magnetic material is formed between a side gap and a 10-16 kG magnetic layer in the side shields, and between a 16-19 kG magnetic layer and the leading gap in the leading shield to improve Hy_grad and Hy_grad_x while maintaining write-ability. The HS is from 10 to 100 nm thick and has a first side facing the write pole with a height of ≦0.15 micron, and a second side facing a main pole flared side that may extend to a full side shield height of ≦0.5 micron. First and second sides may form a continuous curve or the a double tapered design where first and second sides have different angles with respect to a center plane. The side shield design described herein is especially beneficial for side gaps of 20-60 nm.
Information query
IPC分类: