Invention Grant
- Patent Title: Method of supplying cobalt to recess
- Patent Title (中): 向凹槽供应钴的方法
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Application No.: US14620886Application Date: 2015-02-12
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Publication No.: US09362167B2Publication Date: 2016-06-07
- Inventor: Atsushi Shimada , Shinji Furukawa , Tatsuo Hatano
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2014-032941 20140224
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/768 ; H01L21/285

Abstract:
A method of supplying cobalt to a recess formed in an insulation film of an object to be processed is disclosed. In one embodiment, the method includes forming a cobalt nitride film on a surface of the insulation film comprising a surface defining the recess, forming a cobalt film on the cobalt nitride film, and heating the cobalt film.
Public/Granted literature
- US20150243556A1 Method of Supplying Cobalt to Recess Public/Granted day:2015-08-27
Information query
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