A field effect transistor includes a substrate, a first graphene (Gr) layer on the substrate, a second graphene (Gr) layer on the substrate, a fluorographene (GrF) layer on the substrate and between the first and second graphene layers, a first ohmic contact on the first graphene layer, a second ohmic contact on the second graphene layer, a gate aligned over the fluorographene layer, and a gate dielectric between the gate and the fluorographene layer and between the gate and the first and second ohmic contacts.