Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14798413Application Date: 2015-07-13
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Publication No.: US09362409B2Publication Date: 2016-06-07
- Inventor: Toshimasa Ishigaki , Fumio Takahashi , Hideki Kuriyama
- Applicant: Japan Display Inc.
- Applicant Address: JP Tokyo
- Assignee: JAPAN DISPLAY INC.
- Current Assignee: JAPAN DISPLAY INC.
- Current Assignee Address: JP Tokyo
- Agency: Typha IP LLC
- Priority: JP2012-107694 20120509
- Main IPC: H01L33/08
- IPC: H01L33/08 ; H01L27/12 ; G02F1/1362 ; H01L29/786

Abstract:
A manufacturing method of a display device having an array substrate includes the steps of forming a projection of an organic material in a pixel on the array substrate by patterning a photosensitive material or by inkjet, forming a TFT on the array substrate, wherein a source electrode of the TFT is formed to extend on at least part of the upper surface of the projection, forming an inorganic passivation layer over the TFT and over at least part of the upper surface of the projection, forming an organic passivation layer over the inorganic passivation layer, forming an upper insulating layer over at least part of the organic passivation layer, forming a contact hole in the inorganic passivation layer and the upper insulation layer over the upper surface of the projection, and forming a pixel electrode on the upper insulation layer which contacts the source electrode.
Public/Granted literature
- US20150318404A1 Semiconductor device Public/Granted day:2015-11-05
Information query
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