Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US14459455Application Date: 2014-08-14
-
Publication No.: US09362422B2Publication Date: 2016-06-07
- Inventor: Han-jin Lim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0154809 20131212
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L29/41 ; H01L29/92 ; H01L27/108 ; H01L49/02
Abstract:
Provided is a semiconductor device and a method for fabricating the same. The semiconductor device includes an interlayer insulating layer formed on a semiconductor substrate, a metal contact plug penetrating the interlayer insulating layer, a cylindrical lower electrode formed on the metal contact plug and including a first metal and a trench, a supporter formed in the trench and including a second metal that is different from the first metal, a dielectric layer formed on the lower electrode and the supporter and an upper electrode formed on the dielectric layer.
Public/Granted literature
- US20150171159A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-06-18
Information query
IPC分类:
