Invention Grant
US09362494B2 Array of cross point memory cells and methods of forming an array of cross point memory cells
有权
交叉点存储单元阵列和形成交叉点存储单元阵列的方法
- Patent Title: Array of cross point memory cells and methods of forming an array of cross point memory cells
- Patent Title (中): 交叉点存储单元阵列和形成交叉点存储单元阵列的方法
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Application No.: US14293577Application Date: 2014-06-02
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Publication No.: US09362494B2Publication Date: 2016-06-07
- Inventor: Fabio Pellizzer , Stephen W. Russell , Tony M. Lindenberg
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
An array of cross point memory cells comprises spaced elevationally inner first lines, spaced elevationally outer second lines which cross the first lines, and a multi-resistive state region elevationally between the first and second lines where such cross. Individual of the multi-resistive state regions comprise elevationally outer multi-resistive state material and elevationally inner multi-resistive state material that are electrically coupled to one another. The inner multi-resistive state material has opposing edges in a vertical cross-section. The outer multi-resistive state material has opposing edges in the vertical cross-section that are laterally offset relative to the opposing edges of the inner multi-resistive state material in the vertical cross-section. Methods are also disclosed.
Public/Granted literature
- US20150349255A1 Array Of Cross Point Memory Cells And Methods Of Forming An Array Of Cross Point Memory Cells Public/Granted day:2015-12-03
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