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发明授权
US09362512B2 Electronic device insulating layer material capable of forming an insulating layer at low temperature 有权
能够在低温下形成绝缘层的电子器件绝缘层材料

Electronic device insulating layer material capable of forming an insulating layer at low temperature
摘要：
Insulating layer material comprising: polymer compound of a repeating unit containing a cyclic ether structure and a repeating unit of the formula: wherein R5 represents a hydrogen atom or a methyl group; Rb b represents a linking moiety which links the main chain of the polymer compound with a side chain of the polymer compound and optionally has a fluorine atom; R represents an organic group capable of being detached by an acid; R′ represents a hydrogen atom or a monovalent organic group having from 1 to 20 carbon atoms and optionally having a fluorine atom; the suffix b represents an integer of 0 or 1, and the suffix n represents an integer of from 1 to 5; when there are two or more Rs, they may be the same or different; and when there are two or more R's, they may be the same or different; and tungsten (V) alkoxide.
摘要（中）：

绝缘层材料包括：含有环醚结构的重复单元的高分子化合物和下式的重复单元：其中R5代表氢原子或甲基; Rb b表示将高分子化合物的主链与高分子化合物的侧链连接并且任选地具有氟原子的连接部分; R表示能够被酸分离的有机基团; R'表示氢原子或碳原子数1〜20的任选具有氟原子的一价有机基团， 后缀b表示0或1的整数，后缀n表示1〜5的整数， 当有两个或更多卢比时，它们可能相同或不同; 当有两个或更多个R时，它们可以相同或不同; 和钨（V）醇盐。

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