Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US14154448Application Date: 2014-01-14
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Publication No.: US09362718B2Publication Date: 2016-06-07
- Inventor: Jong In Yang , Seung Hwan Lee , Hyun Kwon Hong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0011832 20130201
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01S5/20 ; H01L33/38 ; H01L33/22 ; H01L33/44 ; H01L33/48

Abstract:
A semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first electrode disposed below the light emitting structure, the first electrode being electrically connected to the first conductivity type semiconductor layer, a second electrode within the light emitting structure, the second electrode being electrically connected to the second conductivity type semiconductor layer, an insulating part electrically separating the second electrode from the first conductivity type semiconductor layer, the active layer, and the first electrode, a first pad electrode electrically connected to the first electrode, and a second pad electrode electrically connected to the second electrode, the second pad electrode being exposed to a top surface of the light emitting structure.
Public/Granted literature
- US20140219303A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2014-08-07
Information query
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