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公开(公告)号：US09362718B2
公开(公告)日：2016-06-07
申请号：US14154448
申请日：2014-01-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong In Yang , Seung Hwan Lee , Hyun Kwon Hong
CPC classification number: H01S5/20 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/44 , H01L33/486 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first electrode disposed below the light emitting structure, the first electrode being electrically connected to the first conductivity type semiconductor layer, a second electrode within the light emitting structure, the second electrode being electrically connected to the second conductivity type semiconductor layer, an insulating part electrically separating the second electrode from the first conductivity type semiconductor layer, the active layer, and the first electrode, a first pad electrode electrically connected to the first electrode, and a second pad electrode electrically connected to the second electrode, the second pad electrode being exposed to a top surface of the light emitting structure.
Abstract translation: 半导体发光器件包括：发光结构，包括第一导电类型半导体层，有源层和第二导电类型半导体层;第一电极，设置在发光结构的下方，第一电极与第一导电性电连接 在所述发光结构内的第二电极，所述第二电极与所述第二导电型半导体层电连接;绝缘部，其将所述第二电极与所述第一导电型半导体层，所述有源层和所述第一导电型半导体层 电极，电连接到第一电极的第一焊盘电极和与第二电极电连接的第二焊盘电极，第二焊盘电极暴露于发光结构的顶表面。
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公开(公告)号：US09099629B2
公开(公告)日：2015-08-04
申请号：US13929431
申请日：2013-06-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong In Yang , Yong Il Kim , Kwang Min Song , Wan Tae Lim , Se Jun Han , Hyun Kwon Hong
CPC classification number: H01L33/0075 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2224/16 , H01L2933/0016
Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.
Abstract translation: 半导体发光器件包括第一导电半导体层，有源层，第二导电半导体层，第一内部电极，第二内部电极，绝缘部分以及第一和第二焊盘电极。 有源层设置在第一导电半导体层的第一部分上，并且其上设置有第二导电层。 第一内部电极设置在与第一部分分离的第一导电半导体层的第二部分上。 第二内部电极设置在第二导电半导体层上。 绝缘部分设置在第一和第二内部电极之间，并且第一和第二焊盘电极设置在绝缘部分上以连接到第一和第二内部电极中的相应一个。
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Patent Agency Ranking
公开(公告)号：US10128425B2
公开(公告)日：2018-11-13
申请号：US15863724
申请日：2018-01-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Joon Woo Jeon , Sang Seok Lee , Hyun Kwon Hong
Abstract: A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and an insulating layer on the light emitting structure and including first and second through-holes. The insulating layer includes a first lower insulating layer and a second lower insulating layer. The first insulating layer is disposed on the first conductivity-type semiconductor layer and is surrounded by the second lower insulating layer with the first through-hole interposed therebetween.
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公开(公告)号：US09070835B2
公开(公告)日：2015-06-30
申请号：US14146689
申请日：2014-01-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ju Heon Yoon , Sang Yeon Kim , Seung Hwan Lee , Jin Hyun Lee , Wan Tae Lim , Hyun Kwon Hong
CPC classification number: H01L33/382 , H01L33/20 , H01L33/22 , H01L33/40 , H01L33/44 , H01L2224/13 , H01L2933/0016
Abstract: A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.
Abstract translation: 一种半导体发光器件，包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 连接到第一导电类型半导体层的第一电极; 第二电极，包括连接到第二导电类型半导体层的接触层，设置在接触层上的覆盖层和设置在覆盖层上的金属缓冲层，金属缓冲层包围覆盖层的上表面和侧表面 ; 设置在所述发光结构上以使得所述第一和第二电极露出的第一绝缘层; 以及设置在所述第一绝缘层上的第二绝缘层，使得所述第一电极的至少一部分和所述金属缓冲层的至少一部分露出。
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公开(公告)号：US09887334B1
公开(公告)日：2018-02-06
申请号：US15443202
申请日：2017-02-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Joon Woo Jeon , Sang Seok Lee , Hyun Kwon Hong
CPC classification number: H01L33/62 , H01L33/24 , H01L33/38 , H01L33/44 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066
Abstract: A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and an insulating layer on the light emitting structure and including first and second through-holes. The insulating layer includes a first lower insulating layer and a second lower insulating layer. The first insulating layer is disposed on the first conductivity-type semiconductor layer and is surrounded by the second lower insulating layer with the first through-hole interposed therebetween.
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公开(公告)号：US09324904B2
公开(公告)日：2016-04-26
申请号：US14817750
申请日：2015-08-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong In Yang , Yong Il Kim , Kwang Min Song , Wan Tae Lim , Se Jun Han , Hyun Kwon Hong
CPC classification number: H01L33/0075 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2224/16 , H01L2933/0016
Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.
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7.发明授权Semiconductor light emitting element, and light emitting device having conductive vias of first electrode structure disposed below second pad electrode of second electrode structure 有权半导体发光元件和具有设置在第二电极结构的第二焊盘电极下方的第一电极结构的导电通孔的发光器件公开(公告)号：US09166109B2
公开(公告)日：2015-10-20
申请号：US13900268
申请日：2013-05-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong In Yang , Tae Hyung Kim , Kwang Min Song , Seung Hwan Lee , Wan Tae Lim , Se Jun Han , Hyun Kwon Hong , Su Min Hwangbo
CPC classification number: H01L33/382 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor light emitting element includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A first electrode structure includes a conductive via connected to the first conductivity type semiconductor layer. A second electrode structure is connected to the second conductivity type semiconductor layer. An insulating part having an open region exposes part of the first and second electrode structures while covering the first and second electrode structures. First and second pad electrodes are formed on the first and second electrode structures exposed by the open region and are connected to the first and second electrode structures.
Abstract translation: 半导体发光元件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 第一电极结构包括连接到第一导电类型半导体层的导电通孔。 第二电极结构连接到第二导电类型半导体层。 具有开放区域的绝缘部分暴露第一和第二电极结构的一部分同时覆盖第一和第二电极结构。 第一和第二焊盘电极形成在由开放区域暴露的第一和第二电极结构上，并连接到第一和第二电极结构。
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