Invention Grant
US09368214B2 Programmable peak-current control in non-volatile memory devices
有权
非易失性存储器件中的可编程峰值电流控制
- Patent Title: Programmable peak-current control in non-volatile memory devices
- Patent Title (中): 非易失性存储器件中的可编程峰值电流控制
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Application No.: US14322102Application Date: 2014-07-02
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Publication No.: US09368214B2Publication Date: 2016-06-14
- Inventor: Yoav Kasorla , Avraham Poza Meir
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/10 ; G11C16/04 ; G11C16/34
Abstract:
A method includes, in a memory device, receiving a command that specifies a peak power consumption that is not to be exceeded by the memory device. A memory of the memory device is configured in accordance with the peak power consumption specified in the command. A data storage operation in the configured memory is performed, while complying with the specified peak power consumption.
Public/Granted literature
- US20150098272A1 PROGRAMMABLE PEAK-CURRENT CONTROL IN NON-VOLATILE MEMORY DEVICES Public/Granted day:2015-04-09
Information query
