Invention Grant
- Patent Title: Source down semiconductor devices and methods of formation thereof
- Patent Title (中): 降低半导体器件及其形成方法
-
Application No.: US14614119Application Date: 2015-02-04
-
Publication No.: US09368436B2Publication Date: 2016-06-14
- Inventor: Manfred Schneegans , Andreas Meiser , Martin Mischitz , Michael Roesner , Michael Pinczolits
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L23/528 ; H01L23/495 ; H01L21/48 ; H01L23/00

Abstract:
A method for forming a semiconductor device includes forming device regions in a semiconductor substrate having a first side and a second side. The device regions are formed adjacent the first side. The method further includes forming a seed layer over the first side of the semiconductor substrate, and forming a patterned resist layer over the seed layer. A contact pad is formed over the seed layer within the patterned resist layer. The method further includes removing the patterned resist layer after forming the contact pad to expose a portion of the seed layer underlying the patterned resist layer, and forming a protective layer over the exposed portion of the seed layer.
Public/Granted literature
- US20160035654A1 Source Down Semiconductor Devices and Methods of Formation Thereof Public/Granted day:2016-02-04
Information query
IPC分类: