Invention Grant
US09368448B2 Metal-containing films as dielectric capping barrier for advanced interconnects 有权
含金属膜作为先进互连的电介质封盖屏障

Metal-containing films as dielectric capping barrier for advanced interconnects
Abstract:
A method is provided for forming an interconnect structure for use in semiconductor devices. The method starts with forming a low-k bulk dielectric layer on a substrate and then forming a trench in the low-k bulk dielectric layer. A liner layer is formed on the low-k bulk dielectric layer being deposited conformally to the trench. A copper layer is formed on the liner layer filling the trench. Portions of the copper layer and liner layer are removed to form an upper surface of the low-k bulk dielectric layer, the liner layer, and the copper layer. A metal containing dielectric layer is formed on the upper surface of the low-k bulk dielectric layer, the liner layer, and the copper layer.
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