Invention Grant
- Patent Title: Metal-containing films as dielectric capping barrier for advanced interconnects
- Patent Title (中): 含金属膜作为先进互连的电介质封盖屏障
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Application No.: US14268727Application Date: 2014-05-02
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Publication No.: US09368448B2Publication Date: 2016-06-14
- Inventor: Yihong Chen , Abhijit Basu Mallick , Mehul B. Naik , Srinivas D. Nemani
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768 ; H01L23/528

Abstract:
A method is provided for forming an interconnect structure for use in semiconductor devices. The method starts with forming a low-k bulk dielectric layer on a substrate and then forming a trench in the low-k bulk dielectric layer. A liner layer is formed on the low-k bulk dielectric layer being deposited conformally to the trench. A copper layer is formed on the liner layer filling the trench. Portions of the copper layer and liner layer are removed to form an upper surface of the low-k bulk dielectric layer, the liner layer, and the copper layer. A metal containing dielectric layer is formed on the upper surface of the low-k bulk dielectric layer, the liner layer, and the copper layer.
Public/Granted literature
- US20150179581A1 METAL-CONTAINING FILMS AS DIELECTRIC CAPPING BARRIER FOR ADVANCED INTERCONNECTS Public/Granted day:2015-06-25
Information query
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