公开(公告)号：US20250066913A1

公开(公告)日：2025-02-27

申请号：US18455508

申请日：2023-08-24

Applicant: Applied Materials, Inc.

Inventor： Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Diwakar Kedlaya ,  Priya Chouhan

IPC: C23C16/455 ,  C23C16/40 ,  H01J37/32 ,  H01L21/02

Abstract: Methods of filling a feature on a semiconductor substrate may include performing a process to fill the feature on the semiconductor substrate by repeatedly performing first operations. First operations can include providing a silicon-containing precursor. First operations can include contacting the substrate with the silicon-containing precursor to form a silicon-containing material within the feature defined on the substrate. First operations can include purging the semiconductor processing chamber. First operations can include providing an oxygen-and-hydrogen-containing precursor. First operations can include contacting the substrate with the oxygen-and-hydrogen-containing precursor to form a silicon-and-oxygen-containing material within the feature defined on the substrate.

公开(公告)号：US20240420934A1

公开(公告)日：2024-12-19

申请号：US18209711

申请日：2023-06-14

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Soman ,  Yanze Wu ,  Zeqing Shen ,  Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Siyao Wang ,  Keith Tatseun Wong ,  Lakmal C. Kalutarage

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311

Abstract: Exemplary methods of semiconductor processing may include methods for nonconformally building up silicon-and-oxygen-containing material where the top of the feature preferentially fills at a slower rate as compared to the bottom of the feature. Such methods may include iterative nonconformal etching operations and/or iterative nonconformal inhibition operations. For example, after building up a layer comprising silicon-and-oxygen-containing material, the layer may be nonconformally etched before building up another layer comprising silicon-and-oxygen-containing material. In another example, in the building up of the layer, an inhibitor may be introduced preferentially at and near the top of the features to provide nonconformal buildup of the silicon-and-oxygen-containing material.

公开(公告)号：US12110584B2

公开(公告)日：2024-10-08

申请号：US17361231

申请日：2021-06-28

Applicant: Applied Materials, Inc.

Inventor： Chandan Das ,  Susmit Singha Roy ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Abhijit Basu Mallick ,  Mark Saly

IPC: C23C16/30 ,  C23C16/04 ,  C23C16/06 ,  C23C16/448 ,  H01L21/02

CPC classification number: C23C16/305 ,  C23C16/04 ,  C23C16/06 ,  C23C16/4485 ,  H01L21/0228

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

公开(公告)号：US20240282632A1

公开(公告)日：2024-08-22

申请号：US18109365

申请日：2023-02-14

Applicant: Applied Materials, Inc.

Inventor： Zachary J. Devereaux ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Zeqing Shen ,  Susmit Singha Roy ,  Mark J. Saly ,  Abhijit Basu Mallick

IPC: H01L21/768 ,  C23C16/04 ,  C23C16/32 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02

CPC classification number: H01L21/76897 ,  C23C16/042 ,  C23C16/32 ,  C23C16/402 ,  C23C16/45527 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/76802

Abstract: A method includes selectively forming at least one passivation layer on at least one first conductive layer disposed in a first interlevel dielectric (ILD) layer, selectively forming at least one catalyst layer on the at least one passivation layer, wherein the at least one passivation layer prevents formation of the at least one catalyst layer on the first conductive layer, and selectively forming at least one supplemental dielectric layer using the at least one catalyst layer. The at least one catalyst layer induces formation of the at least one supplemental dielectric layer, and the at least one supplemental dielectric layer includes a dielectric material having a dielectric constant of less than or equal to about 4.

公开(公告)号：US12046468B2

公开(公告)日：2024-07-23

申请号：US16953569

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02211 ,  H01L21/0245 ,  H01L21/02532

Abstract: Methods for depositing a silicon-germanium film on a substrate are described. The method comprises exposing a substrate to a silicon precursor and a germanium precursor to form a conformal silicon-germanium film. The substrate comprises at least one film stack and at least one feature, the film stack comprising alternating layers of silicon and silicon-germanium. The silicon-germanium film has a conformality greater than 50%.

公开(公告)号：US12018364B2

公开(公告)日：2024-06-25

申请号：US17119655

申请日：2020-12-11

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick

IPC: C23C16/40

CPC classification number: C23C16/407

Abstract: Methods for forming coating films comprising germanium oxide are disclosed. In some embodiments, the films are super-conformal to a feature on the surface of a substrate. The films are deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the super-conformal film.

公开(公告)号：US12014925B2

公开(公告)日：2024-06-18

申请号：US17330035

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Bhaskar Jyoti Bhuyan ,  Mark J. Saly ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  C23C16/30 ,  C23C16/32 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0332 ,  C23C16/30 ,  C23C16/32 ,  C23C16/50 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/02115 ,  H01L21/02274 ,  H01J2237/332 ,  H01L21/02205 ,  H01L21/31122 ,  H01L21/31144

Abstract: Exemplary deposition methods may include delivering a ruthenium-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. At least one of the ruthenium-containing precursor or the hydrogen-containing precursor may include carbon. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a ruthenium-and-carbon material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US11769666B2

公开(公告)日：2023-09-26

申请号：US17379508

申请日：2021-07-19

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Fei Wang ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/02 ,  A61K9/00 ,  A61K31/438 ,  A61K31/4409 ,  A61K31/47 ,  A61K31/497 ,  A61K47/12 ,  A61K47/26 ,  A61K47/36 ,  H01L21/3065

CPC classification number: H01L21/02636 ,  A61K9/0024 ,  A61K31/438 ,  A61K31/4409 ,  A61K31/47 ,  A61K31/497 ,  A61K47/12 ,  A61K47/26 ,  A61K47/36 ,  H01L21/0262 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02664 ,  H01L21/3065

Abstract: Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.

公开(公告)号：US11732352B2

公开(公告)日：2023-08-22

申请号：US17173871

申请日：2021-02-11

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: C23C16/40 ,  C23C16/52

CPC classification number: C23C16/402 ,  C23C16/52

Abstract: Hydrogen free (low-H) silicon dioxide layers are disclosed. Some embodiments provide methods for forming low-H layers using hydrogen-free silicon precursors and hydrogen-free oxygen sources. Some embodiments provide methods for tuning the stress profile of low-H silicon dioxide films. Further, some embodiments of the disclosure provide oxide-nitride stacks which exhibit reduced stack bow after anneal.

公开(公告)号：US11676813B2

公开(公告)日：2023-06-13

申请号：US17025009

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Aykut Aydin ,  Rui Cheng ,  Yi Yang ,  Krishna Nittala ,  Karthik Janakiraman ,  Bo Qi ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/324 ,  H01J37/32 ,  C23C16/56 ,  C23C16/50 ,  C23C16/30 ,  C23C16/24

CPC classification number: H01L21/0257 ,  C23C16/24 ,  C23C16/30 ,  C23C16/50 ,  C23C16/56 ,  H01J37/3244 ,  H01L21/02532 ,  H01L21/324 ,  H01J2237/332

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the silicon-containing precursor and the boron-containing precursor. The dopant-containing precursor may include one or more of carbon, nitrogen, oxygen, or sulfur. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The silicon-and-boron material may include greater than or about 1 at. % of a dopant from the dopant-containing precursor.