Invention Grant
US09368578B2 Methods of forming substrates comprised of different semiconductor materials and the resulting device
有权
形成由不同半导体材料构成的衬底的方法和所得到的器件
- Patent Title: Methods of forming substrates comprised of different semiconductor materials and the resulting device
- Patent Title (中): 形成由不同半导体材料构成的衬底的方法和所得到的器件
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Application No.: US13758225Application Date: 2013-02-04
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Publication No.: US09368578B2Publication Date: 2016-06-14
- Inventor: Bartlomiej Jan Pawlak , Steven Bentley , Ajey Jacob
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/12 ; H01L21/8238 ; H01L21/84 ; H01L27/092 ; H01L27/12

Abstract:
Obtaining a structure comprised of first and second layers of a first semiconductor materials and a strain relief buffer (SRB) layer between the first and second layers, forming a sidewall spacer on the sidewalls of an opening in the second layer, and forming a third semiconductor material in the opening, wherein the first, second and third semiconductor materials are different. A device includes first and second layers of first and second semiconductor materials and an SRB layer positioned above the first layer. The second layer is positioned above a first portion of the SRB layer, a region of a third semiconductor material is in an opening in the second layer and above a second portion of the SRB layer, and an insulating material is positioned between the region comprised of the third semiconductor material and the second layer.
Public/Granted literature
- US20140217467A1 METHODS OF FORMING SUBSTRATES COMPRISED OF DIFFERENT SEMICONDUCTOR MATERIALS AND THE RESULTING DEVICE Public/Granted day:2014-08-07
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