Invention Grant
US09373538B2 Interconnect level structures for confining stitch-induced via structures
有权
用于限制针迹引导通孔结构的互连级结构
- Patent Title: Interconnect level structures for confining stitch-induced via structures
- Patent Title (中): 用于限制针迹引导通孔结构的互连级结构
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Application No.: US14873824Application Date: 2015-10-02
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Publication No.: US09373538B2Publication Date: 2016-06-21
- Inventor: Stephen E. Greco , Rasit O. Topaloglu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Steven J. Meyers
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L21/311 ; H01L23/48
Abstract:
A design layout is provided such that an underlying conductive line structure underlies a stitch region in an overlying conductive line structure. A stitch-induced via structure can be formed between the underlying conductive line structure and the overlying conductive line structure when a stitch region in a hard mask layer is etched multiple times. At least one of the underlying conductive line structure and the overlying conductive line structure is electrically isolated from other conductive line structures in a same design level so as to avoid unintentional electrical shorts.
Public/Granted literature
- US20160027687A1 INTERCONNECT LEVEL STRUCTURES FOR CONFINING STITCH-INDUCED VIA STRUCTURES Public/Granted day:2016-01-28
Information query
IPC分类:
